MT46H16M32LFCX-6 IT:B TR Micron Technology Inc, MT46H16M32LFCX-6 IT:B TR Datasheet - Page 50

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MT46H16M32LFCX-6 IT:B TR

Manufacturer Part Number
MT46H16M32LFCX-6 IT:B TR
Description
IC DDR SDRAM 512MBIT 90VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT46H16M32LFCX-6 IT:B TR

Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
512M (16M x 32)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
90-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 17: Alternate Initialization with CKE LOW
PDF: 09005aef82d5d305
512mb_ddr_mobile_sdram_t47m.pdf – Rev. I 12/09 EN
Command
V
V
DDQ
CK#
CKE
CK
DD
1
LOW level
LVCMOS
Notes:
Power up: V
NOP
T = 200µs
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1. PRE = PRECHARGE command; LMR = LOAD MODE REGISTER command; AR = AUTO RE-
2. NOP or DESELECT commands are required for at least 200μs.
3. Other valid commands are possible.
DD
and CK stable
t IS
t IS
FRESH command; ACT = ACTIVE command.
NOP
T0
t IH
t CH
t CL
PRE
T1
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AR
Ta0
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512Mb: x16, x32 Mobile LPDDR SDRAM
Tb0
AR
Micron Technology, Inc. reserves the right to change products or specifications without notice.
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LMR
Tc0
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LMR
Td0
© 2004 Micron Technology, Inc. All rights reserved.
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ACT
Te0
Initialization
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Don’t Care
NOP
Tf0
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