MT48H32M16LFBF-6:B TR Micron Technology Inc, MT48H32M16LFBF-6:B TR Datasheet - Page 30
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MT48H32M16LFBF-6:B TR
Manufacturer Part Number
MT48H32M16LFBF-6:B TR
Description
IC SDRAM 512MBIT 166MHZ 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT48H32M16LFBF-75B_TR.pdf
(86 pages)
Specifications of MT48H32M16LFBF-6:B TR
Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
512M (32Mx16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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WRITE
Figure 10: WRITE Command
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
Note:
The WRITE command is used to initiate a burst write access to an active row. The val-
ues on the BA0 and BA1 inputs select the bank; the address provided selects the starting
column location. The value on input A10 determines whether auto precharge is used. If
auto precharge is selected, the row being accessed is precharged at the end of the write
burst; if auto precharge is not selected, the row remains open for subsequent accesses.
Input data appearing on the DQ is written to the memory array, subject to the DQM
input logic level appearing coincident with the data. If a given DQM signal is registered
LOW, the corresponding data is written to memory; if the DQM signal is registered
HIGH, the corresponding data inputs are ignored and a WRITE is not executed to that
byte/column location.
BA0, BA1
Address
1. EN AP = enable auto precharge, DIS AP = disable auto precharge.
RAS#
CAS#
A10
WE#
CKE
CLK
CS#
1
HIGH
Valid address
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
Column address
Bank address
DIS AP
EN AP
30
Don’t Care
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2007 Micron Technology, Inc. All rights reserved.
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