BC857BW-7 Diodes Inc., BC857BW-7 Datasheet - Page 2

• Manufacturer Part Number: BC857BW-7
• Description: Transistors Bipolar - BJT PNP BIPOLAR
• Manufacturer: Diodes Inc.

Specifications of BC857BW-7

• Product Category: Transistors Bipolar - BJT
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 200 MHz
• Dc Collector/base Gain Hfe Min: 220 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-323
• Maximum Power Dissipation: 200 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000

Thermal Characteristics
Maximum Ratings
Electrical Characteristics
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Emitter Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
DC Current Gain (Note 6)
Collector Cutoff Current
Collector-Emitter Saturation Voltage (Note 6)
Base-Emitter Turn-On Voltage (Note 6)
Base-Emitter Saturation Voltage (Note 6)
Output Capacitance
Transition Frequency
Noise Figure
Notes:
BC856AW – BC858CW
Document Number: DS30251 Rev. 9 - 2
5. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper in still air condition; the device is
6. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
measured when operating in a steady-state condition.
Characteristic
Characteristic
Characteristic
(@T
Current Gain Group
A
= +25°C, unless otherwise specified.)
(@T
(@T
A
= +25°C, unless otherwise specified.)
A
= +25°C, unless otherwise specified.)
BC856
BC857
BC858
BC856
BC857
BC858
BC856
BC857
BC858
BC856
BC857
BC858
(Note 5)
(Note 5)
A
B
C
www.diodes.com
Symbol
V
V
BV
BV
BV
V
I
CE(sat)
BE(sat)
C
BE(on)
h
2 of 5
CBO
NF
f
obo
CBO
CEO
FE
EBO
T
Symbol
Symbol
T
V
V
J
V
R
, T
I
I
P
CBO
CEO
EBO
I
CM
EM
θJA
C
D
-600
STG
Min
125
220
420
100
-80
-50
-30
-65
-45
-30
-5
-
-
-
-
-
-
-250
-650
-700
-850
Typ
290
180
520
200
-75
3
-
-
-
-
-
-
-300
-650
-750
-820
-950
Max
-65 to +150
250
475
800
-15
4.5
10
-4
-
-
-
-
-
Value
Value
-100
-200
-200
-5.0
200
625
-80
-50
-30
-65
-45
-30
BC856AW-BC858CW
Unit
MHz
mV
mV
mV
nA
µA
pF
dB
V
V
V
-
I
I
I
V
V
V
I
I
I
I
I
I
V
V
f = 100MHz
V
R
∆f = 200Hz
C
C
E
C
C
C
C
C
C
CE
CB
CB
CB
CE
CE
S
= -100nA
= -10mA
= -100nA
= -10mA, I
= -100mA, I
= -2mA, V
= -10mA, V
= -10mA, I
= -100mA, I
= 2kΩ, f = 1kHz
= -30V
= -5.0V, I
= -30V, T
= -10V, f = 1.0MHz
= -5V, I
= -5V, I
Test Condition
© Diodes Incorporated
November 2012
C
C
CE
B
B
= -10mA,
= -200µA
C
A
CE
B
B
= -0.5mA
= -0.5mA
°C/W
Unit
Unit
mW
= -2.0mA
= +150°C
= -5V
mA
mA
mA
= -5.0mA
= -5mA
°C
V
V
V
= -5V