MT47H32M8BP-5E:B TR Micron Technology Inc, MT47H32M8BP-5E:B TR Datasheet - Page 20

• Manufacturer Part Number: MT47H32M8BP-5E:B TR
• Description: IC DDR2 SDRAM 256MBIT 5NS 60FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT47H32M8BP-5E:B TR

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 256M (32M x 8)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications – Absolute Ratings
Table 5: Absolute Maximum DC Ratings
Temperature and Thermal Impedance
PDF: 09005aef8117c187
256MbDDR2.pdf - Rev. M 7/09 EN
Parameter
V
V
V
Voltage on any ball relative to V
Input leakage current; any input 0V ≤ V
Output leakage current; 0V ≤ V
V
DD
DDQ
DDL
REF
supply voltage relative to V
leakage current; V
supply voltage relative to V
supply voltage relative to V
Notes:
REF
= valid V
Stresses greater than those listed in Table 5 may cause permanent damage to the de-
vice. This is a stress rating only, and functional operation of the device at these or any
other conditions outside those indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating conditions for extended periods
may adversely affect reliability.
It is imperative that the DDR2 SDRAM device’s temperature specifications, shown in
Table 6 (page 21), be maintained in order to ensure the junction temperature is in the
proper operating range to meet data sheet specifications. An important step in maintain-
ing the proper junction temperature is using the device’s thermal impedances correct-
ly. The thermal impedances are listed in Table 7 (page 22) for the applicable and
available die revision and packages.
Incorrectly using thermal impedances can produce significant errors. Read Micron tech-
nical note TN-00-08, “Thermal Applications,” prior to using the thermal impedances
listed in Table 7. For designs that are expected to last several years and require the flexi-
bility to use several DRAM die shrinks, consider using final target theta values (rather
than existing values) to account for increased thermal impedances from the die size re-
duction.
The DDR2 SDRAM device’s safe junction temperature range can be maintained when
the T
ature is too high, use of forced air and/or heat sinks may be required in order to satisfy
the case temperature specifications.
1. V
2. V
3. Voltage on any I/O may not exceed voltage on V
OUT
SS
SS
SSL
SSQ
C
quired when power is ramping down.
REF
≤ V
DD
REF
specification is not exceeded. In applications where the device’s ambient temper-
, V
level
DDQ
≤ 0.6 x V
IN
DDQ
≤ V
; DQ and ODT disabled
, and V
DD
DDQ
; all other balls not under test = 0V
; however, V
DDL
must be within 300mV of each other at all times; this is not re-
Electrical Specifications – Absolute Ratings
20
REF
may be ≥ V
Micron Technology, Inc. reserves the right to change products or specifications without notice.
256Mb: x4, x8, x16 DDR2 SDRAM
DDQ
provided that V
DDQ
.
V
Symbol Min Max Units Notes
IN
V
V
I
V
VREF
, V
I
DDQ
DDL
OZ
I
DD
I
OUT
©2003 Micron Technology, Inc. All rights reserved.
–1.0
–0.5
–0.5
–0.5
REF
–5
–5
–2
≤ 300mV.
2.3
2.3
2.3
2.3
5
5
2
µA
µA
µA
V
V
V
V
1, 2
1
1
3