BC847B-7 Diodes Inc., BC847B-7 Datasheet - Page 5

• Manufacturer Part Number: BC847B-7
• Description: Transistors Bipolar - BJT NPN BIPOLAR
• Manufacturer: Diodes Inc.

Specifications of BC847B-7

• Product Category: Transistors Bipolar - BJT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 300 MHz
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Maximum Power Dissipation: 300 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000

Typical Electrical Characteristics
BC846A – BC848C
Document Number: DS11108 Rev. 25 - 2
1,000
1,000
100
100
10
10
1
Figure 1 Typical DC Current Gain vs. Collector Current
1
1
1
V
CE
Figure 3 Typical Gain-Bandwidth Product
= 5V
I , COLLECTOR CURRENT (mA)
I , COLLECTOR CURRENT (mA)
C
C
T = -50°C
A
10
vs. Collector Current
T = 150°C
A
10
100
T = 25°C
A
(@T
A
1,000
= +25°C, unless otherwise specified.)
100
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0.4
0.3
0.2
0.1
0
0.1
Figure 2 Typical Collector-Emitter Saturation Voltage
I
I
C
B
= 20
I , COLLECTOR CURRENT (mA)
C
T = 150°C
A
1
vs. Collector Current
T = 25°C
10
A
BC846A-BC848C
100
T = -50°C
A
© Diodes Incorporated
February 2013
1,000