BC807-40W T/R NXP Semiconductors, BC807-40W T/R Datasheet - Page 10
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BC807-40W T/R
Manufacturer Part Number
BC807-40W T/R
Description
Transistors Bipolar - BJT TRANS GP TAPE-7
Manufacturer
NXP Semiconductors
Datasheet
1.BC807-16_TR.pdf
(19 pages)
Specifications of BC807-40W T/R
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
80 MHz
Dc Collector/base Gain Hfe Min
250 at 100 mA at 1 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-323
Continuous Collector Current
0.5 A
Maximum Power Dissipation
200 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
BC807-40W,115
NXP Semiconductors
BC807_BC807W_BC327_6
Product data sheet
Fig 12. Selection -40: Collector current as a function of collector-emitter voltage; typical values
(10) I
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
(8) I
(9) I
T
B
B
B
B
B
B
B
B
B
B
amb
= −12.0 mA
= −10.8 mA
= −9.6 mA
= −8.4 mA
= −7.2 mA
= −6.0 mA
= −4.8 mA
= −3.6 mA
= −2.4 mA
= −1.2 mA
= 25 °C
(A)
I
−1.2
−0.8
−0.4
C
0
0
Rev. 06 — 17 November 2009
−1
−2
(5)
−3
BC807; BC807W; BC327
(4)
45 V, 500 mA PNP general-purpose transistors
(3)
−4
006aaa130
(2)
V
CE
(10)
(V)
(1)
(6)
(7)
(8)
(9)
−5
© NXP B.V. 2009. All rights reserved.
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