BC817-16 /T3 NXP Semiconductors, BC817-16 /T3 Datasheet - Page 12
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BC817-16 /T3
Manufacturer Part Number
BC817-16 /T3
Description
Transistors Bipolar - BJT TRANS GP TAPE-13
Manufacturer
NXP Semiconductors
Datasheet
1.BC817-16W_T3.pdf
(19 pages)
Specifications of BC817-16 /T3
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
100 at 100 mA at 1 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Continuous Collector Current
0.5 A
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
BC817-16,235
NXP Semiconductors
Fig 14. Package outline SOT323 (SC-70)
BC817_BC817W_BC337_6
Product data sheet
Plastic surface-mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT323
1.1
0.8
A
max
0.1
A 1
1
0.4
0.3
b p
y
IEC
e 1
0.25
0.10
c
D
e
b p
2.2
1.8
D
3
JEDEC
1.35
1.15
E
0
2
Rev. 06 — 17 November 2009
REFERENCES
1.3
e
w
B
M
0.65
B
e 1
JEITA
SC-70
scale
1
2.2
2.0
H E
BC817; BC817W; BC337
A
45 V, 500 mA NPN general-purpose transistors
0.45
0.15
L p
A 1
2 mm
0.23
0.13
Q
H E
0.2
E
v
detail X
0.2
PROJECTION
w
EUROPEAN
L p
A
Q
c
© NXP B.V. 2009. All rights reserved.
X
v
ISSUE DATE
04-11-04
06-03-16
M
A
SOT323
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