BC807-40 /T3 NXP Semiconductors, BC807-40 /T3 Datasheet - Page 14
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BC807-40 /T3
Manufacturer Part Number
BC807-40 /T3
Description
Transistors Bipolar - BJT TRANS GP TAPE-13
Manufacturer
NXP Semiconductors
Datasheet
1.BC807-16W_T3.pdf
(19 pages)
Specifications of BC807-40 /T3
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.5 A
Gain Bandwidth Product Ft
80 MHz
Dc Collector/base Gain Hfe Min
250 at 100 mA at 1 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
BC807-40,235
NXP Semiconductors
Fig 16. Package outline SOT54A
BC807_BC807W_BC327_6
Product data sheet
Plastic single-ended leaded (through hole) package; 3 leads (wide pitch)
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
UNIT
mm
VERSION
OUTLINE
SOT54A
D
5.2
5.0
A
d
0.48
0.40
b
E
3
1
2
0.66
0.55
b 1
IEC
b 1
0.45
0.38
c
4.8
4.4
D
JEDEC
1.7
1.4
d
Rev. 06 — 17 November 2009
REFERENCES
0
4.2
3.6
E
A
5.08
e
JEITA
scale
2.5
2.54
e 1
BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
14.5
12.7
5 mm
L
L 2
L 1
L
max.
1
3
(1)
L 2
3
2
L
PROJECTION
EUROPEAN
© NXP B.V. 2009. All rights reserved.
b
ISSUE DATE
c
97-05-13
04-06-28
e 1
e
SOT54A
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