BC817-40 /T3 NXP Semiconductors, BC817-40 /T3 Datasheet - Page 11
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BC817-40 /T3
Manufacturer Part Number
BC817-40 /T3
Description
Transistors Bipolar - BJT TRANS GP TAPE-13
Manufacturer
NXP Semiconductors
Datasheet
1.BC817-16W_T3.pdf
(19 pages)
Specifications of BC817-40 /T3
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
250 at 100 mA at 1 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Continuous Collector Current
0.5 A
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
BC817-40,235
NXP Semiconductors
8. Package outline
Fig 13. Package outline SOT23 (TO-236AB)
BC817_BC817W_BC337_6
Product data sheet
Plastic surface-mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT23
1.1
0.9
A
max.
A
0.1
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
Rev. 06 — 17 November 2009
0
2
1.9
e
w
B
0.95
M
e
1
JEITA
scale
B
1
2.5
2.1
H
E
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
0.45
0.15
L
A
p
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
PROJECTION
0.1
EUROPEAN
w
L p
A
Q
c
© NXP B.V. 2009. All rights reserved.
X
v
ISSUE DATE
M
04-11-04
06-03-16
A
SOT23
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