MT48LC4M32B2TG-7:G TR Micron Technology Inc, MT48LC4M32B2TG-7:G TR Datasheet - Page 45

• Manufacturer Part Number: MT48LC4M32B2TG-7:G TR
• Description: IC SDRAM 128MBIT 143MHZ 86TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT48LC4M32B2TG-7:G TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 128M (4Mx32)
• Speed: 143MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 86-TSOPII
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 15:
Table 16:
Table 17:
PDF: 09005aef80872800/Source: 09005aef80863355
128MbSDRAMx32_2.fm - Rev. L 1/09 EN
Parameter/Condition
Parameter/Condition
Parameter
Supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Input leakage current:
Any input 0V ≤ V
Output leakage current:
DQs are disabled; 0V ≤ V
Output levels:
)Output high voltage (I
Output low voltage (I
Operating current: Active mode;
Burst = 2; READ or WRITE;
Standby current: Power-Down mode;
CKE = LOW; All banks idle
Standby current: Active mode; CS# = HIGH;
CKE = HIGH; All banks active after
No accesses in progress
Operating current: Burst mode; Continuous burst;
READ or WRITE; All banks active, CL = 3
Auto refresh current:
CL = 3; CKE, CS# = HIGH
Self refresh current: CKE ≤ 0.2V
Input Capacitance: CLK
Input Capacitance: All other input-only pins
Input/Output Capacitance: DQs
DC Electrical Characteristics and Operating Conditions
Notes 1, 6 apply to the entire table; notes appear on page 48; V
I
Notes 1, 6, 11, 13 apply to the entire table; notes appear on page 48; V
Capacitance
Note 2 applies to the entire table; notes appear on page 48
DD
IN
Specifications and Conditions
≤ V
OUT
DD
OUT
OUT
(All other pins not under test = 0V)
= 4mA)
t
RC =
= –4mA)
≤ V
DD
t
RC (MIN); CL = 3
Q
t
RCD met;
t
RFC =
t
RFC (MIN)
45
V
Symbol
Symbol
DD
I
I
I
I
I
I
V
V
V
DD
DD
DD
DD
DD
DD
, V
I
Vil
Symbol
OZ
OH
I
OL
IH
I
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1
2
3
4
5
6
DD
C
C
C
I
I
I
1
2
o
Q
DD
Min
= +3.3V ±0.3V, V
–0.3
190
195
320
2.4
–5
–5
65
-6
3
2
2
2
–
DD
Min
2.5
2.5
4.0
Max
, V
Electrical Specifications
V
DD
DD
Max
Q = +3.3V ±0.3V
165
175
320
3.6
0.8
0.4
55
-7
5
5
–
2
2
+ 0.3
©2001 Micron Technology, Inc. All rights reserved.
128Mb: x32 SDRAM
DD
Max
Q = +3.3V ±0.3V
4.0
4.0
6.5
Units
Units
mA
mA
mA
mA
mA
mA
µA
µA
V
V
V
V
V
3, 18, 19,
3, 18, 19,
3, 12, 18,
Units
Notes
Notes
19, 26
19, 26
pF
pF
pF
22
22
26
26
4