BCP51-10 /T3 NXP Semiconductors, BCP51-10 /T3 Datasheet - Page 15
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BCP51-10 /T3
Manufacturer Part Number
BCP51-10 /T3
Description
Transistors Bipolar - BJT TRANS MED PWR TAPE13
Manufacturer
NXP Semiconductors
Datasheet
1.BCP51-10_T3.pdf
(22 pages)
Specifications of BCP51-10 /T3
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
45 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Gain Bandwidth Product Ft
145 MHz
Dc Collector/base Gain Hfe Min
63 at 5 mA at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SC-73
Dc Current Gain Hfe Max
63 at 150 mA at 2 V
Maximum Power Dissipation
1000 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
BCP51-10,135
NXP Semiconductors
10. Packing information
BCP51_BCX51_BC51PA
Product data sheet
Table 9.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
[2]
[3]
[4]
Type
number
BCP51
BCX51
BC51PA
Fig 21. Package outline SOT1061 (HUSON3)
For further information and the availability of packing methods, see
Valid for all available selection groups.
T1: normal taping
T3: 90 rotated taping
[2]
Packing methods
Package
SOT223
SOT89
SOT1061
All information provided in this document is subject to legal disclaimers.
1.05
0.95
Dimensions in mm
Rev. 9 — 13 October 2011
0.3
0.2
0.35
0.25
Description
8 mm pitch, 12 mm tape and reel
8 mm pitch, 12 mm tape and reel; T1
8 mm pitch, 12 mm tape and reel; T3
4 mm pitch, 8 mm tape and reel
1
BCP51; BCX51; BC51PA
1.3
1.6
1.4
2.1
1.9
3
2
45 V, 1 A PNP medium power transistors
1.1
0.9
0.45
0.35
2.1
1.9
Section
[1]
0.65
max
09-11-12
[3]
[4]
14.
Packing quantity
1000
-115
-115
-146
-
© NXP B.V. 2011. All rights reserved.
-
-
-115
3000
-
4000
-135
-135
-
-
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