IRMCS2013 International Rectifier, IRMCS2013 Datasheet - Page 2

• Manufacturer Part Number: IRMCS2013
• Description: Power Management IC Development Tools IR2175 LV Encoder 5kHz 400Hz 22 to 50V
• Manufacturer: International Rectifier
• Type: Motor / Motion Controllers & Driversr

Specifications of IRMCS2013

• Product: Reference Designs
• Tool Is For Evaluation Of: IRMCK201
• Input Voltage: 22 V to 50 V
• Output Voltage: 3.3 V
• Interface Type: I2C, Parallel, SPI
• Maximum Operating Temperature: + 40 C
• Minimum Operating Temperature: 0 V
• Output Current: 4 mA
• Factory Pack Quantity: 1

Notes:

‚
ƒ
„
IRL6372PbF
BV
∆ΒV
R
V
∆V
I
I
gfs
Q
Q
R
t
t
t
t
C
C
C
I
I
V
t
Q
R
R
Static @ T
Diode Characteristics
Thermal Resistance
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
DS(on)
GS(th)
G
iss
oss
rss
SD
θJL
θJA
g
sw
rr
R
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 ich square copper board.
Q
Q
Q
Q
2
GS(th)
DSS
θ
gs1
gs2
gd
godr
DSS
is measured at
/∆T
J
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Junction-to-Drain Lead
Junction-to-Ambient
T
J
Parameter
of approximately 90°C.
™
Parameter
Parameter
gs2
e
+ Q
f
gd
)
Min.
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.5
30
30
Typ.
1020
Typ.
14.0
17.0
0.01
0.50
5.69
–––
–––
-4.0
–––
–––
–––
–––
–––
–––
–––
–––
4.8
5.3
2.2
5.9
5.3
23
11
13
34
15
98
68
13
Max.
Max.
Typ.
17.9
23.0
-100
–––
–––
–––
150
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.1
1.0
2.0
1.2
8.0
65
20
mV/°C
mV/°C
Units
Units
mΩ
nC
nC
µA
nA
pF
ns
ns
Ω
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
V
I
R
See Figs. 18
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100/µs
D
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
GS
DS
DD
G
GS
DS
= 6.5A
= 6.5A
= 25°C, I
= 25°C, I
= 6.8Ω
= V
= 24V, V
= 24V, V
= 10V, I
= 15V
= 15V, V
= 25V
= 0V, I
= 4.5V, I
= 2.5V, I
= 12V
= -12V
= 4.5V
= 0V
GS
, I
Max.
62.5
D
20
D
S
F
D
Conditions
Conditions
= 250µA
D
D
GS
GS
GS
= 10µA
= 6.5A, V
= 6.5A, V
= 6.5A
d
= 8.1A
= 6.5A
= 0V
= 0V, T
= 4.5V
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D
d
d
= 1mA
DD
J
e
GS
G
= 125°C
= 24V
= 0V
Units
°C/W
d
D
S