MT48LC32M8A2P-7E:D Micron Technology Inc, MT48LC32M8A2P-7E:D Datasheet - Page 92

IC SDRAM 256MBIT 133MHZ 54TSOP

MT48LC32M8A2P-7E:D

Manufacturer Part Number
MT48LC32M8A2P-7E:D
Description
IC SDRAM 256MBIT 133MHZ 54TSOP
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet

Specifications of MT48LC32M8A2P-7E:D

Package / Case
54-TSOP II
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (32M x 8)
Speed
133MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Access Time
RoHS Compliant
Memory Case Style
TSOP
No. Of Pins
54
Operating Temperature Range
0°C To +70°C
Operating Temperature Max
70°C
Operating Temperature Min
0°C
Organization
32Mx8
Density
256Mb
Address Bus
15b
Access Time (max)
5.4ns
Maximum Clock Rate
143MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
135mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Memory Configuration
4 BLK (8M X 8)
Interface Type
LVTTL
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Rev. B – 10/00
Rev. A – 11/99
PDF: 09005aef8091e6d1
256Mb_sdr.pdf - Rev. N 1/10 EN
Although considered final, these specifications are subject to change, as further product development and data characterization some-
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.
• Updated diagram to correct
• Updated single write with AP, T3 to note 4, T4 to note 3, and
• Updated alternating bank write access, aligned
• Added new page with "FB" FBGA mechanical diagram as then-page 57.
• Added new page for FBGA marking decoder as then-page 58.
• Removed all -7 speed grade references and timing information on then-pages 1,10,
• Added (0°C ≤ T
• Changed -7 to -7E and updated any previous -7 specs to -7E specs on then-pages 36-54.
• Added notation 3 to 8E reference on front page.
• Added text under AUTO REFRESH paragraph on then-page 13, "All active banks must
• Changed "either" to "any" under Power-Down paragraph, 2nd sentence, on then-
• For I
• On then-page 35:
• Removed notes 3 through 8 on then-page 55, as they apply only to the "B4" version of
• Changed from Advanced to Preliminary.
• Initial release.
www.micron.com/productsupport Customer Comment Line: 800-932-4992
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
Micron and the Micron logo are trademarks of Micron Technology, Inc.
page 50.
page 52.
page 53.
and 32-35.
be PRECHARGED prior to issuing an AUTO REFRESH command. The AUTO RE-
FRESH command should not be issued until the minimum
PRECHARGE command as shown in the operations section."
page 23.
64Mb SDR.
All other trademarks are the property of their respective owners.
– Removed any "CAS latency = 3" or "CL = 3" reference under the parameter/con-
– Updated I
– Updated I
– I
– Note 11, changed V
– Note 18, changed to "I
– Note 32, changed to "For -8E, CL=2 and t CK=10ns; For -75, CL=3 and t CK=7.5ns;
– Removed reference to notes 3 through 8 in TSOP package dimensions.
DD
dition column, as this became defined in notes 18 and 32 on then-page 32.
amount by the amount the frequency is altered for the test condition."
For -7E, CL=2, t CK=7.5ns."
DD5
Specifications and Conditions table:
and I
DD6
DD
DD
A
≤ +70°C) range to I
specification table values from TBD to new values.
3 -8E, 75, -7E values to 55mA, 60mA, 60mA, respectively.
parameters changed from
times occur.
IL(MIN)
DD
92
t
WR/
current will increase or decrease in a proportional
to V
t
RP to be centered around the end of
IH(MIN)
DD
Micron Technology, Inc. reserves the right to change products or specifications without notice.
spec table and AC tables on then-pages 32-34.
.
t
RC to
t
WR and
256Mb: x4, x8, x16 SDRAM
t
RFC.
t
RP to T7 center on then-
t
© 1999 Micron Technology, Inc. All rights reserved.
RP has been met after the
t
WR to note 2 on then-
Revision History
t
RAS on then-

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