BC807-16W /T3 NXP Semiconductors, BC807-16W /T3 Datasheet - Page 7

• Manufacturer Part Number: BC807-16W /T3
• Description: Transistors Bipolar - BJT TRANS GP TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of BC807-16W /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.5 A
• Gain Bandwidth Product Ft: 80 MHz
• Dc Collector/base Gain Hfe Min: 100 at 100 mA at 1 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-323
• Maximum Power Dissipation: 200 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: BC807-16W,135

NXP Semiconductors
BC807_BC807W_BC327_6
Product data sheet
Fig 4.
Fig 6.
V
−10
BEsat
(V)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
−10
−1
−1
−10
I
Selection -16: Base-emitter saturation voltage
as a function of collector current; typical
values
I
Selection -40: Base-emitter saturation voltage as a function of collector current; typical values
C
C
−1
amb
amb
amb
amb
amb
amb
/I
/I
B
B
= 10
= 10
= −55 °C
= 25 °C
= 150 °C
= −55 °C
= 25 °C
= 150 °C
−1
(1)
(2)
(3)
−10
V
−10
BEsat
(V)
−10
−10
−1
−1
−10
2
−1
I
006aaa122
C
(mA)
Rev. 06 — 17 November 2009
−10
−1
3
(1)
(2)
(3)
−10
Fig 5.
V
BC807; BC807W; BC327
−10
BEsat
(V)
(1) T
(2) T
(3) T
45 V, 500 mA PNP general-purpose transistors
−10
−1
−10
−1
−10
I
Selection -25: Base-emitter saturation voltage
as a function of collector current; typical
values
2
C
−1
amb
amb
amb
I
/I
006aaa124
C
B
(mA)
= 10
= −55 °C
= 25 °C
= 150 °C
−10
−1
3
(1)
(2)
(3)
−10
−10
© NXP B.V. 2009. All rights reserved.
2
I
006aaa123
C
(mA)
−10
3
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