TIP29F-S Bourns, TIP29F-S Datasheet - Page 3

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TIP29F-S

Manufacturer Part Number
TIP29F-S
Description
Transistors Bipolar - BJT 120V 1A NPN
Manufacturer
Bourns
Datasheet

Specifications of TIP29F-S

Product Category
Transistors Bipolar - BJT
Rohs
yes
Factory Pack Quantity
1000
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
R O D U C T
1000
100
10
0·001
1
V
T
t
C
p
CE
= 300 µs, duty cycle < 2%
= 25°C
= 4 V
TYPICAL DC CURRENT GAIN
COLLECTOR CURRENT
I
C
0·01
- Collector Current - A
I N F O R M A T I O N
Figure 1.
vs
1·0
0·9
0·8
0·7
0·6
0·5
0·01
0·1
V
T
TYPICAL CHARACTERISTICS
C
CE
= 25°C
= 4 V
BASE-EMITTER VOLTAGE
TCS631AD
COLLECTOR CURRENT
I
C
- Collector Current - A
1·0
Figure 3.
vs
0·1
0·01
COLLECTOR-EMITTER SATURATION VOLTAGE
1·0
0·1
10
0·1
NPN SILICON POWER TRANSISTORS
TCS631AF
1·0
TIP29, TIP29A, TIP29B, TIP29C
I
BASE CURRENT
B
- Base Current - mA
1·0
Figure 2.
vs
10
100
I
I
I
C
C
C
= 100 mA
= 300 mA
= 1 A
TCS631AE
1000
3

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