SBC807-25LT1G ON Semiconductor, SBC807-25LT1G Datasheet - Page 9

• Manufacturer Part Number: SBC807-25LT1G
• Description: Transistors Bipolar - BJT SS GP XSTR SPCL TR
• Manufacturer: ON Semiconductor

Specifications of SBC807-25LT1G

• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.5 A
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 160 at 100 mA at 1 V, 40 at 500 mA at 1 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Dc Current Gain Hfe Max: 160 at 100 mA at 1 V
• Maximum Power Dissipation: 300 mW
• Minimum Operating Temperature: - 55 C

BC807−16L, SBC807-16L BC807−25L, SBC807-25L, BC807−40L, SBC807−40L
TYPICAL CHARACTERISTICS − BC807−16LT1, BC807−25LT1, BC807−40LT1
1
1 mS
1 S
100 mS
0.1
10 mS
Thermal Limit
0.01
0.001
0.1
1
10
100
V
, COLLECTOR EMITTER VOLTAGE (V)
CE
Figure 24. Safe Operating Area
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