BC817-T Rectron, BC817-T Datasheet - Page 2

no-image

BC817-T

Manufacturer Part Number
BC817-T
Description
Transistors Bipolar - BJT NPN 0.8A 45V Gen Pur
Manufacturer
Rectron
Datasheet

Specifications of BC817-T

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
45 V
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
50 V
Maximum Dc Collector Current
0.5 A
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
40
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Dc Current Gain Hfe Max
600
Maximum Power Dissipation
250 mW
Factory Pack Quantity
3000
Collector Cut off Current
Emitter cut-off current
Base Emitter on Voltage
Saturation Voltage
DC Current Gain
Collector Capacitance
Transition Frequency
25 C unless otherwise specified)
Symbol
V
I
I
V
h
CBO
CEsat
EBO
C
f
FE
BE
T
C
V
V
I
I
I
I
I
I
f = 1MHz
I
f =100MHz
C
C
C
C
C
E
C
CB
CB
= I
= 0, V
= 500 mA, V
= 500 mA, I
= 500 mA, V
= 100 mA, V
= 10mA, V
= 20V, I
= 20V, I
E
= 0, V
Test Conditions
EB
= 5V
E
E
CB
CE
= 0, TJ = 25°C
= 0, T
B
CE
CE
CE
= 10V,
= 50mA
= 5V,
= 1V
= 1V
= 1V
J
= 150°C
typ.
<
<
<
<
<
>
-
>
100 to 600
1, 2V
Typ.
100
700
100
10
40
5
5
MHz
Unit
mV
nA
pF
V
A
A

Related parts for BC817-T