MJD350-13 Diodes Inc., MJD350-13 Datasheet - Page 3

• Manufacturer Part Number: MJD350-13
• Description: Transistors Bipolar - BJT HIGH VOLTAGE PNP SMT
• Manufacturer: Diodes Inc.

Specifications of MJD350-13

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 300 V
• Collector- Emitter Voltage Vceo Max: 300 V
• Emitter- Base Voltage Vebo: 3 V
• Maximum Dc Collector Current: 0.5 A
• Dc Collector/base Gain Hfe Min: 30 at 50 mA at 10 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Dc Current Gain Hfe Max: 30 at 50 mA at 10 V
• Maximum Power Dissipation: 1560 mW
• Minimum Operating Temperature: - 55 C
• Factory Pack Quantity: 2500

Ordering Information
Notes:
Marking Information
MJD350
Document number: DS31608 Rev. 2 - 2
1,000
100
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
10
1
0.1
Part Number
MJD350-13
Fig. 7 Typical Capacitance Characteristics
0.001
0.01
0.1
0.00001
1
V , REVERSE VOLTAGE (V)
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
R
D = 0.3
D = 0.7
D = 0.1
D = 0.05
D = 0.5
1
0.0001
(Note 5)
C
ibo
10
0.001
C
obo
Fig. 8 Transient Thermal Response (Note 3)
f = 1MHz
MJD350
t , PULSE DURATION TIME (s)
YYWW
1
0.01
100
www.diodes.com
D = 0.9
DPAK
Case
3 of 4
0.1
MJD350 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year, (ex: 08 = 2008)
WW = Week Code 01-52
= Manufacturers’ code marking
1
P(pk)
10
T - T = P * R
Duty Cycle, D = t /t
R
J
θJA
R
θ
JA
t
(t) = r(t) *
A
1
t
= 81°C/W
2
100
θ
2500/Tape & Reel
R
JA
θ
1 2
JA
(t)
Packaging
1,000
© Diodes Incorporated
November 2008
MJD350