MT46V32M16TG-5B:F Micron Technology Inc, MT46V32M16TG-5B:F Datasheet - Page 48
![IC DDR SDRAM 512MBIT 5NS 66TSOP](/photos/7/22/72288/mfg557-66-tsop_sml.jpg)
MT46V32M16TG-5B:F
Manufacturer Part Number
MT46V32M16TG-5B:F
Description
IC DDR SDRAM 512MBIT 5NS 66TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT46V32M16P-5BF_TR.pdf
(91 pages)
Specifications of MT46V32M16TG-5B:F
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
512M (32Mx16)
Speed
5ns
Interface
Parallel
Voltage - Supply
2.5 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
- Current page: 48 of 91
- Download datasheet (4Mb)
ACTIVE (ACT)
Figure 17:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
Activating a Specific Row in a Specific Bank
The ACTIVE command is used to open (or activate) a row in a particular bank for a
subsequent access, like a read or a write, as shown in Figure 17. The value on the BA0,
BA1 inputs selects the bank, and the address provided on inputs A0–An selects the row.
BA0, BA1
Address
RAS#
CAS#
WE#
CK#
CKE
CS#
CK
HIGH
Bank
Row
Don’t Care
48
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR SDRAM
©2000 Micron Technology, Inc. All rights reserved.
Commands
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