2SC4207-GR(TE85L,F Toshiba, 2SC4207-GR(TE85L,F Datasheet
2SC4207-GR(TE85L,F
Manufacturer Part Number
2SC4207-GR(TE85L,F
Description
Transistors Bipolar - BJT 150mA 50V
Manufacturer
Toshiba
Datasheet
1.2SC4207-GRTE85LF.pdf
(4 pages)
Specifications of 2SC4207-GR(TE85L,F
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Dual
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
60 V
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.15 A
Gain Bandwidth Product Ft
80 MHz (Min)
Dc Collector/base Gain Hfe Min
200
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Package / Case
USV
Continuous Collector Current
150 mA
Dc Current Gain Hfe Max
400
Maximum Power Dissipation
300 mW
Factory Pack Quantity
3000
Audio Frequency General Purpose Amplifier Applications
•
•
•
•
•
Absolute Maximum Ratings
Marking
Small package (dual type)
High voltage and high current: V
High h
Excellent h
Complementary to 2SA1618
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note:
Note 1: Total rating
FE:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
h
FE
FE
linearity: h
= 120~700
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
FE
(I
C
= 0.1 mA)/h
CEO
(Ta = 25°C) (Q1, Q2 common)
Symbol
V
V
V
= 50 V, I
T
P
CBO
CEO
EBO
I
I
(Note 1)
T
stg
C
B
C
2SC4207
j
FE
C
(I
= 150 mA (max)
C
−55~125
= 2 mA) = 0.95 (typ.)
Equivalent Circuit
Rating
150
300
125
60
50
30
5
1
Unit
mW
mA
mA
°C
°C
V
V
V
(top view)
Weight: 0.014 g (typ.)
JEDEC
JEITA
TOSHIBA
2-3L1A
2007-11-01
2SC4207
―
―
Unit: mm
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2SC4207-GR(TE85L,F Summary of contents
Page 1
... Q2 common) Symbol Rating V 60 CBO V 50 CEO V 5 EBO I 150 300 (Note 1) T 125 j −55~125 T stg Equivalent Circuit 1 2SC4207 Unit JEDEC ― mW JEITA ― °C TOSHIBA 2-3L1A °C Weight: 0.014 g (typ.) (top view) 2007-11-01 Unit: mm ...
Page 2
... (Note 2) = 100 mA (sat MHz 2SC4207 Min Typ. Max Unit ⎯ ⎯ μA 0.1 ⎯ ⎯ μA 0.1 ⎯ 120 700 ⎯ 0.1 0.25 V ⎯ ⎯ 80 MHz ⎯ 2 3.5 ...
Page 3
... Q2 common) *: Total rating 3 2SC4207 2007-11-01 ...
Page 4
... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 4 2SC4207 2007-11-01 ...