2SB1203S-TL-E ON Semiconductor, 2SB1203S-TL-E Datasheet - Page 2

• Manufacturer Part Number: 2SB1203S-TL-E
• Description: Transistors Bipolar - BJT BIP PNP 5A 50V
• Manufacturer: ON Semiconductor

Specifications of 2SB1203S-TL-E

• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: - 60 V
• Collector- Emitter Voltage Vceo Max: - 50 V
• Emitter- Base Voltage Vebo: - 6 V
• Collector-emitter Saturation Voltage: - 0.28 V
• Maximum Dc Collector Current: - 8 A
• Gain Bandwidth Product Ft: 130 MHz
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-63
• Continuous Collector Current: - 5 A
• Dc Current Gain Hfe Max: 400
• Maximum Power Dissipation: 20 W
• Minimum Operating Temperature: - 55 C

Continued from preceding page.
Electrical Characteristics at Ta=25°C
* : The 2SB1203/2SD1803 are classifi ed by 0.5A h FE as follows :
Switching Time Test Circuit
Ordering Information
I C =10I B1 = --10I B2 =2A
For PNP, the polarity is reversed.
Collector Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
2SB1203S-E
2SB1203S-H
2SD1203T-E
2SD1203T-H
2SB1803S-E
2SB1803S-H
2SD1803T-E
2SD1803T-H
2SB1203S-TL-E
2SB1203S-Tl-H
2SB1203T-TL-E
2SB1203T-Tl-H
2SB1803S-TL-E
2SB1803S-Tl-H
2SB1803T-TL-E
2SB1803T-Tl-H
INPUT
PW=20 s
D.C. 1%
Rank
h FE
Device
50
Parameter
Parameter
V BE = --5V
V R
I B1
100 F
I B2
R B
70 to 140
+
Q
470 F
V CC =25V
+
P C
Tj
Tstg
I CBO
I EBO
h FE 1
h FE 2
f T
Cob
V CE (sat)
V (BR)EBO
t on
t stg
t f
V BE (sat)
V (BR)CBO
V (BR)CEO
OUTPUT
Symbol
Symbol
R L
Package
TP-FA
TP-FA
TP-FA
TP-FA
TP-FA
TP-FA
TP-FA
TP-FA
100 to 200
TP
TP
TP
TP
TP
TP
TP
TP
R
2SB1203/2SD1803
Tc=25°C
V CB =(--)40V, I E =0A
V EB =(--)4V, I C =0A
V CE =(--)2V, I C =(--)0.5A
V CE =(--)2V, I C =(--)4A
V CE =(--)5V, I C =(--)1A
V CB =(--)10V, f=1MHz
I C =(--)3A, I B =(--)0.15A
I C =(--)3A, I B =(--)0.15A
I C =(--)10μA, I E =0A
I C =(--)1mA, R BE =∞
I E =(--)10μA, I C =0A
See specifi ed Test Circuit.
140 to 280
Conditions
S
Conditions
500pcs./bag
500pcs./bag
500pcs./bag
500pcs./bag
500pcs./bag
500pcs./bag
500pcs./bag
500pcs./bag
700pcs./reel
700pcs./reel
700pcs./reel
700pcs./reel
700pcs./reel
700pcs./reel
700pcs./reel
700pcs./reel
Shipping
200 to 400
T
min.
(--)60
(--)50
(--)6
Pb Free and Halogen Free
Pb Free and Halogen Free
Pb Free and Halogen Free
Pb Free and Halogen Free
Pb Free and Halogen Free
Pb Free and Halogen Free
Pb Free and Halogen Free
Pb Free and Halogen Free
70*
35
(130)180
Ratings
(--280)220
(450)500
(--)0.95
typ.
(60)40
(50)50
(20)20
Pb Free
Pb Free
Pb Free
Pb Free
Pb Free
Pb Free
Pb Free
Pb Free
memo
Ratings
--55 to +150
(--550)400
max.
(--)1.3
400*
150
(--)1
(--)1
20
No. 2085-2/10
1
MHz
Unit
Unit
mV
°C
°C
μA
μA
pF
ns
ns
ns
W
W
V
V
V
V