MT48H8M16LFB4-6 IT:K TR Micron Technology Inc, MT48H8M16LFB4-6 IT:K TR Datasheet - Page 60

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MT48H8M16LFB4-6 IT:K TR

Manufacturer Part Number
MT48H8M16LFB4-6 IT:K TR
Description
IC SDRAM 128MBIT 166MHZ 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT48H8M16LFB4-6 IT:K TR

Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
128M (8Mx16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 31: Terminating a WRITE Burst
PDF: 09005aef832ff1ea
128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
Note:
Command
Address
1. DQM is LOW.
CLK
DQ
Transitioning data
WRITE
Bank,
Col n
T0
D
IN
TERMINATE
BURST
T1
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
60
COMMAND
Address
Data
Don’t Care
T2
NEXT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©2008 Micron Technology, Inc. All rights reserved.
WRITE Operation

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