DSS4240Y-7 Diodes Inc., DSS4240Y-7 Datasheet - Page 2

• Manufacturer Part Number: DSS4240Y-7
• Description: Transistors Bipolar - BJT BIPOLAR TRANSISTOR NPN,SOT-363,GREEN,3K
• Manufacturer: Diodes Inc.

Specifications of DSS4240Y-7

• Rohs: yes
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Dc Collector/base Gain Hfe Min: 350 at 100 mA, 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Continuous Collector Current: 2 A
• Maximum Power Dissipation: 625 mW
• Minimum Operating Temperature: - 55 C

Thermal Characteristics
Maximum Ratings
Notes:
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Peak Base Current
Power Dissipation (Note 4) @ T
Thermal Resistance, Junction to Ambient (Note 4) @ T
Operating and Storage Temperature Range
DSS4240Y
Document number: DS31682 Rev. 2 - 2
0.8
0.6
0.4
0.2
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)
0
4. Device mounted on FR-4 PCB, with minimum recommended pad layout.
0
R
0.001
T , AMBIENT TEMPERATURE ( C)
θJA
0.01
A
0.00001
0.1
= 200
50
1
D = 0.05
D = 0.005
D = Single Pulse
D = 0.02
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.01
°
C/W
Characteristic
Characteristic
@T
A
A
= 25°C
0.0001
= 25°C unless otherwise specified
100
0.001
150
°
A
= 25°C
Fig. 3 Transient Thermal Response
200
0.01
t , PULSE DURATION TIME (s)
1
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D = 0.9
2 of 5
0.1
T
Symbol
Symbol
0.001
J
0.01
V
V
V
R
100
, T
I
I
P
0.1
CBO
CEO
EBO
I
CM
BM
10
θ JA
C
D
1
STG
0.1
1
V , COLLECTOR EMITTER VOLTAGE (V)
CE
P(pk)
10
Fig. 2 Safe Operating Area
T - T = P * R
Duty Cycle, D = t /t
R
J
θJA
R
θ
JA
-55 to +150
1
t
(t) = r(t) *
A
1
t
= 180°C/W
2
Value
Value
625
200
0.3
40
40
5
2
3
θ
R
100
JA
1 2
θ
JA
(t)
Pw = 100µs
10
1,000
DSS4240Y
© Diodes Incorporated
°C/W
Unit
Unit
mW
°C
V
V
V
A
A
A
March 2011
100