2SC2812N6-TB-E ON Semiconductor, 2SC2812N6-TB-E Datasheet
2SC2812N6-TB-E
Manufacturer Part Number
2SC2812N6-TB-E
Description
Transistors Bipolar - BJT BIP NPN 0.15A 50V
Manufacturer
ON Semiconductor
Datasheet
1.2SC2812N6-TB-E.pdf
(4 pages)
Specifications of 2SC2812N6-TB-E
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
55 V
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
0.1 V
Maximum Dc Collector Current
300 mA
Gain Bandwidth Product Ft
100 MHz
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Collector Current
150 mA
Dc Current Gain Hfe Max
400
Maximum Power Dissipation
200 mW
Minimum Operating Temperature
- 55 C
Ordering number : EN7198A
2SA1179N / 2SC2812N
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : 2SA1179N : M / 2SC2812N : L
* : The 2SA1179N / 2SC2812N are classified by 1mA h FE as follws:
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
•
•
Miniature package facilitates miniaturization in end products.
High breakdown voltage.
Rank
h FE
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
200 to 400
( ) : 2SA1179N
6
V (BR)CBO
V (BR)CEO
V (BR)EBO
V CE (sat)
V BE (sat)
Symbol
Symbol
V CBO
V CEO
V EBO
I CBO
I EBO
Tstg
h FE
Cob
I CP
P C
I C
I B
Tj
f T
2SA1179N / 2SC2812N
SANYO Semiconductors
V CB =(--)35V, I E =0A
V EB =(--)4V, I C =0A
V CE =(--)6V, I C =(--)1mA
2SC2812N : V CE =6V, I C =1mA
2SA1179N : V CE =- -6V, I C =--10mA
V CB =(--)6V, f=1MHz
I C =(--)50mA, I B =(--)5mA
I C =(--)50mA, I B =(--)5mA
I C =(--)10 A, I E =0A
I C =(--)1mA, R BE =
I E =(--)10 A, I C =0A
92006 MS IM TC-00000143,00000144 / 72602 TS IM TA-2636, 2637
PNP / NPN Epitaxial Planar Silicon Transistors
Low-Frequency General-Purpose
Amp Applications
Conditions
Conditions
DATA SHEET
min
(- -)55
(- -)50
(--)5
200
(- -0.15)0.1
Ratings
(4.0)3.0
typ
Ratings
(180)
100
--55 to +150
max
(- -)150
(- -)300
(--)0.1
(--)0.1
(--)0.5
(--)1.0
(--)55
(--)50
(--)30
(- -)5
200
150
400
No.7198-1/4
Unit
mW
Unit
MHz
MHz
mA
mA
mA
pF
V
V
V
V
V
V
V
V
C
C
A
A
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2SC2812N6-TB-E Summary of contents
Page 1
... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 2SA1179N / 2SC2812N SANYO Semiconductors PNP / NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amp Applications Symbol Conditions ...
Page 2
Package Dimensions unit : mm (typ) 7053-001 0.45 0. 0.95 1.9 2. Base 2 : Emitter 3 : Collector SANYO : CPA --16 --12 --8 -- --10 --20 ...
Page 3
1000 7 5 Ta= -- 100 --0.1 --1.0 --10 Collector Current ...
Page 4
=0. =0.15A Ta= Mounted on a glass epoxy board (20 30 1.6mm) 2 For PNP, the minus sign is ...