IS42S32200E-7BL-TR ISSI, Integrated Silicon Solution Inc, IS42S32200E-7BL-TR Datasheet - Page 26

• Manufacturer Part Number: IS42S32200E-7BL-TR
• Description: IC SDRAM 64MBIT 143MHZ 90BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S32200E-7BL-TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 64M (2Mx32)
• Speed: 143MHz
• Interface: Parallel
• Voltage - Supply: 3.15 V ~ 3.45 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-BGA
• Organization: 2Mx32
• Density: 64Mb
• Address Bus: 13b
• Access Time (max): 8/5.5ns
• Maximum Clock Rate: 143MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 140mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S32200E, IS45S32200E
WRITE Burst
WRITE to WRITE
Random WRITE Cycles
26
Burst length = 2 DQM ix low.
DQMx is low. Each Write Command
may be to any bank.
DQMx is low. Each Write Command
may be to any bank.
COMMAND
COMMAND
ADDRESS
ADDRESS
CLK
CLK
COMMAND
DQ
DQ
ADDRESS
CLK
DQ
WRITE
D
BANK,
COL n
WRITE
D
BANK,
COL n
IN
T0
IN
T0
n
n
WRITE
D
BANK,
COL n
IN
T0
n
D
WRITE
BANK,
NOP
COL b
IN
D
T1
T1
IN
n+1
b
D
NOP
IN
T1
n+1
Integrated Silicon Solution, Inc. — www.issi.com
WRITE
COL m
BANK,
NOP
D
T2
T2
IN
DON'T CARE
m
WRITE
BANK,
COL b
D
T2
DON'T CARE
IN
b
WRITE
BANK,
NOP
COL x
D
T3
T3
IN
x
07/12/2010
Rev. D