MT48LC2M32B2TG-6 IT:G TR Micron Technology Inc, MT48LC2M32B2TG-6 IT:G TR Datasheet - Page 31
![IC SDRAM 64MBIT 167MHZ 86TSOP](/photos/7/22/72264/557-86-tsop_sml.jpg)
MT48LC2M32B2TG-6 IT:G TR
Manufacturer Part Number
MT48LC2M32B2TG-6 IT:G TR
Description
IC SDRAM 64MBIT 167MHZ 86TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT48LC2M32B2P-6G_TR.pdf
(69 pages)
Specifications of MT48LC2M32B2TG-6 IT:G TR
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
64M (2Mx32)
Speed
167MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
86-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
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Figure 19:
Figure 20:
PDF: 09005aef811ce1fe/Source: 09005aef811ce1d5
64MSDRAMx32_2.fm - Rev. J 12/08 EN
Random WRITE Cycles
WRITE-to-READ
Note:
In the case of a fixed-length burst being executed to completion, a PRECHARGE
command issued at the optimum time (as described above) provides the same operation
that would result from the same fixed-length burst with auto precharge. The disadvan-
tage of the PRECHARGE command is that it requires that the command and address
buses be available at the appropriate time to issue the command; the advantage of the
PRECHARGE command is that it can be used to truncate fixed-length or full-page bursts.
COMMAND
COMMAND
ADDRESS
ADDRESS
Each WRITE command may be to any bank. DQM is LOW.
CLK
CLK
DQ
DQ
WRITE
BANK,
BANK,
WRITE
COL n
COL n
D
T0
D
T0
n
IN
n
IN
WRITE
BANK,
n + 1
COL a
NOP
T1
D
T1
D
a
IN
IN
TRANSITIONING DATA
31
BANK,
WRITE
COL x
BANK,
COL b
READ
T2
D
T2
x
IN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
WRITE
BANK,
COL m
T3
T3
NOP
D
m
IN
DON’T CARE
NOP
D
T4
OUT
b
DON’T CARE
NOP
b + 1
T5
D
OUT
©2001 Micron Technology, Inc. All rights reserved.
64Mb: x32 SDRAM
Commands
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