TF256TH-3-TL-H ON Semiconductor, TF256TH-3-TL-H Datasheet

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TF256TH-3-TL-H

Manufacturer Part Number
TF256TH-3-TL-H
Description
JFET NCH J-FET
Manufacturer
ON Semiconductor
Datasheet

Specifications of TF256TH-3-TL-H

Rohs
yes
Transistor Polarity
N-Channel
Drain Current (idss At Vgs=0)
180 uA
Package / Case
SC-106A
Power Dissipation
100 mW
Ordering number : ENA1617A
TF256TH
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ)
7031-001
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
High gain : G V =2.7dB typ (V CC =2V, R L =2.2k Ω , Cin=5pF, V IN =10mV, f=1kHz)
Ultrasmall package facilitates miniaturization in end products
Best suited for use in electret condenser microphone for audio equipments and telephones
Excellent transient characteristics
Adoption of FBET process
Halogen free compliance
Bot t om View
Top View
1
1.4
Parameter
3
0.45
2
0.25
0.2
1 : Drain
2 : Source
3 : Gate
SANYO : VTFP
0.1
V GDO
I G
I D
P D
Tj
Tstg
N-channel Silicon Juncton FET
Electret Condenser Microphone
Applications
Symbol
http://semicon.sanyo.com/en/network
SANYO Semiconductors
TF256TH
10511 TKIM TC-00002535/N2509GB TKIM TC-00002097
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 8,000 pcs./real
Packing Type: TL
Electrical Connection
Conditions
3
TL
1
2
DATA SHEET
: VTFP
: SC-106A
Ratings
Marking
--55 to +150
1
N
3
--20
100
150
10
No. A1617-1/5
2
1
Unit
mW
mA
mA
°C
°C
V

Related parts for TF256TH-3-TL-H

TF256TH-3-TL-H Summary of contents

Page 1

... Top View 1.4 0. 0.1 0.2 0.45 Bot t om View 1 : Drain 2 : Source 3 : Gate SANYO : VTFP TF256TH SANYO Semiconductors N-channel Silicon Juncton FET Electret Condenser Microphone Applications Symbol Conditions V GDO Tstg Product & Package Information • Package • JEITA, JEDEC • ...

Page 2

... Input Capacitance Reverse Transfer Capacitance [Ta=25° =2.0V =2.2kΩ, Cin=5pF, See specifi ed Test Circuit.] Voltage Gain Reduced Voltage Characteristic Frequency Characteristic Total Harmonic Distortion Output Noise Voltage * : The TF256TH is classifi DSS as follows : (unit : μ A) Marking N3 N4 Rank DSS ...

Page 3

... Drain-to-Source Voltage =10mV 6 f=1kHz R L =2.2kΩ 5 Cin=5pF --1 --2 -- Supply Voltage TF256TH =0V f=1kHz 2.0 1.5 1.0 0.5 0 --0.10 --0. 100 IT15215 1 400 450 500 IT16273 3 ...

Page 4

... Drain Current, I DSS -- μA THD -- I DSS 2.4 THD : V CC =2V 2.2 2.0 1.8 1.6 I DSS : V DS =2V 1.4 1.2 1.0 0.8 0.6 0.4 0 100 150 200 250 300 350 Drain Current, I DSS -- μA TF256TH 100 1 0.1 400 450 500 0 IT16277 120 V IN =30mV f=1kHz 100 R L =2.2kΩ ...

Page 5

... SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of January, 2011. Specifi cations and information herein are subject to change without notice. TF256TH PS No. A1617-5/5 ...

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