IS61LV12816L-10BLI-TR ISSI, Integrated Silicon Solution Inc, IS61LV12816L-10BLI-TR Datasheet - Page 12
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IS61LV12816L-10BLI-TR
Manufacturer Part Number
IS61LV12816L-10BLI-TR
Description
IC SRAM 2MBIT 10NS 48MBGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet
1.IS61LV12816L-10TL.pdf
(16 pages)
Specifications of IS61LV12816L-10BLI-TR
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
2M (128K x 16)
Speed
10ns
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-MBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS61LV12816L-10BLI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS61LV12816L
DATA RETENTION SWITCHING CHARACTERISTICS
Note 1:
12
DATA RETENTION WAVEFORM
Symbol
V
I
t
t
DR
SDR
RDR
DR
Typical values are measured at V
GND
Parameter
V
Data Retention Current
Data Retention Setup Time
Recovery Time
CE
V
V
DD
DD
DR
for Data Retention
DD
= 3.3V, T
t
SDR
Test Condition
See Data Retention Waveform
V
See Data Retention Waveform
See Data Retention Waveform
A
DD
= 25
= 2.0V, CE V
(CE Controlled)
O
C. Not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com —
DD
Data Retention Mode
CE
– 0.2V
V
DD
- 0.2V
Options
Com.
Ind.
Min.
2.0
t
—
—
RC
0
t
RDR
Typ.
0.7
—
—
—
—
(1)
Max.
ISSI
3.6
—
—
3
4
1-800-379-4774
Unit
mA
ns
ns
V
10/27/05
Rev. F
®