IS42S16400F-5TL-TR ISSI, Integrated Silicon Solution Inc, IS42S16400F-5TL-TR Datasheet - Page 53
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IS42S16400F-5TL-TR
Manufacturer Part Number
IS42S16400F-5TL-TR
Description
IC SDRAM 64MBIT 200MHZ 54TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Datasheet
1.IS42S16400F-7TL.pdf
(59 pages)
Specifications of IS42S16400F-5TL-TR
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
64M (4M x 16)
Speed
200MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-TSOP II
Organization
4Mx16
Density
64Mb
Address Bus
14b
Access Time (max)
6/5ns
Maximum Clock Rate
200MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
140mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IS42S16400F
IS45S16400F
ALTERNATING BANK WRITE ACCESS
Notes:
1. burst length = 4
2. A
Integrated Silicon Solution, Inc. — www.issi.com
Rev. H
07/28/2010
DQML, DQMH
COMMAND
A0-A9, A11
8
, A
BA0, BA1
9
DQM/
, and A
CKE
CLK
A10
DQ
t
t
CKS
CMS
t
t
t
BANK 0
11
AS
AS
AS
ACTIVE
ROW
ROW
T0
= "Don't Care"
t
CKH
t
t
t
t
AH
AH
AH
CMH
t
t
t
t
RCD
RRD
RAS
RC
t
CK
- BANK 0
- BANK 0
- BANK 0
ENABLE AUTO PRECHARGE
T1
NOP
t
t
CMS
t
CL
COLUMN m
BANK 0
DS
WRITE
D
T2
IN
t
CMH
t
t
DH
m
CH
(2)
t
DS
D
T3
NOP
IN
t
m+
DH
1
t
BANK 1
DS
ACTIVE
ROW
ROW
D
T4
IN
t
m+
DH
2
t
RCD
t
DS
D
- BANK 1
ENABLE AUTO PRECHARGE
T5
IN
NOP
m+
t
DH
t
WR
3
- BANK 0
t
COLUMN b
DS
BANK 1
WRITE
D
T6
IN
t
DH
b
(2)
t
DS
D
t
T7
RP
NOP
IN
t
- BANK 0
b+
DH
1
t
DS
D
T8
NOP
IN
t
b+
DH
2
t
DS
ACTIVE
DON'T CARE
BANK 0
D
T9
ROW
ROW
IN
t
b+
t
t
DH
RCD
WR
3
- BANK 1
- BANK 0
53