IS63LV1024L-10TL ISSI, Integrated Silicon Solution Inc, IS63LV1024L-10TL Datasheet - Page 8

• Manufacturer Part Number: IS63LV1024L-10TL
• Description: IC SRAM 1MBIT 10NS 32TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS63LV1024L-10TL

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 1M (128K x 8)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 32-TSOP II
• Density: 1Mb
• Access Time (max): 10ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 17b
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Number Of Ports: 1
• Supply Current: 150mA
• Operating Supply Voltage (min): 3V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 32
• Word Size: 8b
• Number Of Words: 128K
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

AC WAVEFORMS
WRITE CYCLE NO. 2
IS63LV1024
IS63LV1024L
8
Notes:
1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write,
2. I/O will assume the High-Z state if OE > V
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the Write.
ADDRESS
ADDRESS
D
D
OUT
OUT
WE
WE
D
D
OE
OE
CE
CE
IN
IN
LOW
LOW
LOW
t
SA
(1)
t
DATA UNDEFINED
DATA UNDEFINED
(WE Controlled: OE is LOW During Write Cycle)
SA
(WE Controlled,
IH
.
Integrated Silicon Solution, Inc. — www.issi.com —
= HIGH during Write Cycle)
VALID ADDRESS
t
t
t
t
AW
AW
HZWE
HZWE
VALID ADDRESS
t
t
PWE1
WC
t
t
PWE2
WC
HIGH-Z
HIGH-Z
t
t
SD
SD
DATA
DATA
IN
IN
VALID
VALID
t
t
HD
HD
t
t
LZWE
LZWE
t
t
HA
HA
1-800-379-4774
CE_WR2.eps
CE_WR3.eps
07/02/2010
Rev. O