ZVN0120ASTZ Diodes Inc. / Zetex, ZVN0120ASTZ Datasheet
ZVN0120ASTZ
Manufacturer Part Number
ZVN0120ASTZ
Description
MOSFET -
Manufacturer
Diodes Inc. / Zetex
Datasheet
1.ZVN0120ASTZ.pdf
(1 pages)
Specifications of ZVN0120ASTZ
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.16 A
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Fall Time
8 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
700 mW
Rise Time
8 ns
Typical Turn-off Delay Time
16 ns
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
*
*
APPLICATIONS
*
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2%
Sample test.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
200 Volt V
R
Telephone handsets
REFER TO ZVN0124A FOR GRAPHS
DS(on)
=16
DS
amb
=25°C
amb
SYMBOL MIN.
BV
V
I
I
I
R
g
C
C
C
t
t
t
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
fs
GS(th)
DS(on)
iss
oss
rss
=25°C
DSS
200
1
500
100
3-349
amb
SYMBOL
V
I
I
V
P
T
D
DM
tot
j
DS
GS
:T
= 25°C unless otherwise stated).
MAX.
3
20
10
100
16
85
20
7
7
8
16
8
stg
UNIT CONDITIONS.
V
V
nA
mA
mS
pF
pF
pF
ns
ns
ns
ns
A
A
I
ID=1mA, V
V
V
V
T=125°C
V
V
V
V
V
D
GS
DS
DS
DS
GS
DS
DS
DD
=1mA, V
-55 to +150
= 20V, V
=200 V, V
=160 V, V
=25 V, V
=10V,I
=25V,I
=25 V, V
VALUE
25V, I
200
160
700
ZVN0120A
2
20
(2)
TO92 Compatible
D
D
GS
DS
=250mA
=250mA
D
D
GS
GS
=0V
=250mA
G
= V
DS
GS
GS
S
=10V
=0V, f=1MHz
E-Line
=0V
=0
=0V,
GS
UNIT
mW
mA
°C
A
V
V
(
2
)
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