BS107PTSTZ Diodes Inc. / Zetex, BS107PTSTZ Datasheet - Page 2

• Manufacturer Part Number: BS107PTSTZ
• Description: MOSFET -
• Manufacturer: Diodes Inc. / Zetex

Specifications of BS107PTSTZ

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.12 A
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 500 mW

0.4
0.3
0.2
0.1
0.6
0.5
0
2.5
2.0
1.5
1.0
0.5
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0
2
Voltage Saturation Characteristics
0
Transfer characteristics
V
V
V
GS
2
Output Characteristics
GS-
DS
2.5
20
-
Gate Source Voltage (Volts)
Gate Source Voltage (Volts)
- Drain Source Voltage (Volts)
4
3.0
40
TYPICAL CHARACTERISTICS
6
3.5
60
50mA
25mA
I
100mA
D=
8
4.0
80
10
4.5
100
V
V
V
DS
10V
DS
GS=
6V
4V
3V
=25V
=10V
3-25
10
40
30
20
60
50
20
10
30
0
0
0.5
0.4
0.3
0.2
0.1
0
0
0
Voltage Saturation Characteristics
Capacitance v drain-source voltage
0
Saturation Characteristics
V
V
DS
10
2
DS
V
GS-
-Drain-Source Voltage (Volts)
- Drain Source Voltage (Volts)
2
Gate Source Voltage (Volts)
20
4
4
BS107PT
30
6
6
8
40
8
50
10
I
500mA
250mA
C
C
D=
C
I00mA
10
iss
oss
rss
10V
V
6V
4V
3V
GS
=