ZVN0535ASTOB Diodes Inc. / Zetex, ZVN0535ASTOB Datasheet - Page 3

• Manufacturer Part Number: ZVN0535ASTOB
• Description: MOSFET -
• Manufacturer: Diodes Inc. / Zetex

Specifications of ZVN0535ASTOB

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 350 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.09 A
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Fall Time: 7 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 700 mW
• Rise Time: 7 ns
• Typical Turn-off Delay Time: 16 ns

100
Transconductance v gate-source voltage
90
80
70
60
50
40
30
20
10
250
200
150
100
50
On-resistance vs gate-source voltage
1
0
V
GS
-Gate Source Voltage (Volts)
V
2
2
GS
-Gate Source Voltage (Volts)
3
4
4
TYPICAL CHARACTERISTICS
5 6 7 8 9 10
6
V
DS=
25V
8
20
10
100mA
I
250mA
50mA
D=
Normalised R
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10
8
6
4
2
0
-80 -60
0
Gate charge v gate-source voltage
0.4
T
-40 -20 0 20 40 60 80
j
-Junction Temperature (C°)
I
D=
0.8 1.2 1.6
DS(on)
500mA
Q-Charge (nC)
and V
V
DS
2.0 2.4
=100V 200V 360V
GS(th)
2.8
100
vs Temperature
120
3.2 3.6 4.0
V
I
V
D=
I
GS=
D=
GS=
140 160
0.1A
1mA
10V
V
DS