BS250 SB36890\E6 Vishay Semiconductors, BS250 SB36890\E6 Datasheet - Page 4

• Manufacturer Part Number: BS250 SB36890\E6
• Description: MOSFET P-Channel 60V 0.25A
• Manufacturer: Vishay Semiconductors

Specifications of BS250 SB36890\E6

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 45 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: - 0.18 A
• Resistance Drain-source Rds (on): 14 Ohms
• Mounting Style: Through Hole
• Package / Case: TO-92
• Power Dissipation: 0.83 W
• Factory Pack Quantity: 20000

TP0610L/T, VP0610L/T, BS250
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1000
−0.0
−0.1
−0.2
−0.3
100
0.5
0.4
0.3
0.2
0.1
10
1
0.00
−50
Threshold Voltage Variance Over Temperature
0.01
0.1
2
1
V
10
−25
Source-Drain Diode Forward Voltage
GS
T
−4
J
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
= 0 V
V
= 125_C
0.3
SD
T
J
0
I
− Source-to-Drain Voltage (V)
D
− Junction Temperature (_C)
= 250 mA
25
0.6
10
Single Pulse
−3
50
T
0.9
Normalized Thermal Transient Impedance, Junction-to-Ambient
J
75
T
= −55_C
J
= 25_C
100
1.2
10
−2
125
1.5
150
Square Wave Pulse Duration (sec)
10
−1
2.5
1.5
0.5
10
1
8
6
4
2
0
3
2
1
0
0.01
0
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Gate-Source Voltage
0.1
2
V
GS
I
10
D
− Gate-to-Source Voltage (V)
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
= 200 mA
DM
JM
Time (sec)
4
1
− T
t
1
A
= P
t
T
2
A
DM
= 25_C
Z
6
thJA
S-41260—Rev. H, 05-Jul-04
thJA
100
10
Document Number: 70209
t
t
1
2
(t)
I
= 350_C/W
D
= 500 mA
8
100
600
10
600