IS61LV6416-10TLI-TR ISSI, Integrated Silicon Solution Inc, IS61LV6416-10TLI-TR Datasheet - Page 10

• Manufacturer Part Number: IS61LV6416-10TLI-TR
• Description: IC SRAM 1MBIT 10NS 44TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LV6416-10TLI-TR

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 1M (64K x 16)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-TSOP II
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS61LV6416
IS61LV6416L
10
WRITE CYCLE NO. 4
Notes:
1. The internal Write time is defined by the overlap of CE = LOW, UB and/or LB = LOW, and WE = LOW. All signals must be
2. Tested with OE HIGH for a minimum of 4 ns before WE = LOW to place the I/O in a HIGH-Z state.
3. WE may be held LOW across many address cycles and the LB, UB pins can be used to control the Write function.
in valid states to initiate a Write, but any can be deasserted to terminate the Write. The
referenced to the rising or falling edge of the signal that terminates the Write.
ADDRESS
UB, LB
D
OUT
WE
D
OE
CE
IN
LOW
DATA UNDEFINED
(LB, UB Controlled, Back-to-Back Write)
t
HZWE
ADDRESS 1
t
SD
t
t
WORD 1
SA
WC
t
PBW
HIGH-Z
DATA
VALID
IN
t
t
HD
HA
t
SA
ADDRESS 2
t
t
(1,3)
SD
WC
WORD 2
t
PBW
DATA
VALID
IN
t
t
LZWE
SA
t
,
Integrated Silicon Solution, Inc.
HD
t
t
HA
HA
,
t
SD
, and
UB_CEWR4.eps
t
HD
timing is
ISSI
11/22/05
Rev. I
®