BS170ZL1 ON Semiconductor, BS170ZL1 Datasheet

BS170ZL1

Manufacturer Part Number

BS170ZL1

Description

MOSFET 60V 500mA N-Channel

Manufacturer

ON Semiconductor

Datasheet

1.BS170ZL1.pdf (4 pages)

Specifications of BS170ZL1

Product Category

MOSFET

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

500 mA

Resistance Drain-source Rds (on)

5 Ohms

Configuration

Single

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-92

Forward Transconductance Gfs (max / Min)

0.2 S

Minimum Operating Temperature

- 55 C

Power Dissipation

0.35 W

Factory Pack Quantity

2000

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BS170ZL1G

Manufacturer:

ON Semiconductor

Quantity:

135

Current page: 1 of 4
Download datasheet (93Kb)

BS170G

Small Signal MOSFET

500 mA, 60 Volts

N−Channel TO−92 (TO−226)

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

NOTE: The Power Dissipation of the package may result in a lower continuous

*For additional information on our Pb−Free strategy and soldering details, please

April, 2011 − Rev. 6

MAXIMUM RATINGS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Drain −Source Voltage

Gate−Source Voltage

Drain Current (Note)

Total Device Dissipation @ T

Operating and Storage Junction

This is a Pb−Free Device*

− Continuous

− Non−repetitive (t

Temperature Range

drain current.

Rating

≤ 50 ms)

= 25°C

Symbol

GSM

, T

stg

−55 to

Value

+150

± 20

± 40

350

0.5

Unit

Vdc

Vpk

Adc

°C

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

1 2

(Note: Microdot may be in either location)

ORDERING INFORMATION

500 mA, 60 Volts

MARKING DIAGRAM

& PIN ASSIGNMENT

http://onsemi.com

Drain

DS(on)

= Assembly Location

= Year

= Work Week

= Pb−Free Package

AYWWG

N−Channel

BS170

Gate

TO−92 (TO−226)

Publication Order Number:

= 5.0 W

STYLE 30

CASE 29

Source

BS170/D

Related parts for BS170ZL1

BS170ZL1 Summary of contents

Page 1

... NOTE: The Power Dissipation of the package may result in a lower continuous drain current. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2011 April, 2011 − Rev. 6 ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Gate Reverse Current ( Vdc Drain−Source Breakdown Voltage ( 100 mAdc CHARACTERISTICS (Note 1) Gate Threshold Voltage ( ...

Page 3

V in PULSE GENERATOR 1.0 MW Figure 1. Switching Test Circuit 2.0 1.6 1.2 0.8 0 JUNCTION TEMPERATURE (°C) J Figure 3. V Normalized versus Temperature GS(th) 2.0 ...

Page 4

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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