S-93C66BD0I-D8S1G Seiko Instruments, S-93C66BD0I-D8S1G Datasheet - Page 14

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S-93C66BD0I-D8S1G

Manufacturer Part Number
S-93C66BD0I-D8S1G
Description
IC EEPROM 4KBIT 500KHZ 8DIP
Manufacturer
Seiko Instruments
Datasheet

Specifications of S-93C66BD0I-D8S1G

Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Memory Size
4K (256 x 16)
Speed
500kHz
Interface
3-Wire Serial
Voltage - Supply
1.8 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-DIP
Organization
256 K x 16
Interface Type
3-Wire
Maximum Clock Frequency
1 MHz
Supply Voltage (max)
5.5 V
Supply Voltage (min)
1.8 V
Maximum Operating Current
0.8 mA
Maximum Operating Temperature
+ 85 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 40 C
Operating Supply Voltage
- 0.3 V, + 7 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
14
3-WIRE SERIAL E
S-93C46B/56B/66B
4. 2 Writing data (WRITE)
DO
CS
SK
DI
To write 16-bit data to a specified address, change CS to high and then input the WRITE instruction,
address, and 16-bit data following the start bit. The write operation starts when CS goes low. There is no
need to set the data to 1 before writing. If the clocks more than the specified number have been input, the
clock pulse monitoring circuit cancels the WRITE instruction. For details of the clock pulse monitoring
circuit, refer to “ Function to Protect Against Write due to Erroneous Instruction Recognition ”.
CS
SK
DO
DI
1
2
1
PROM
0
2
0
2
1
3
1
3
Figure 12 Data Write Timing (S-93C56B, S-93C66B)
A5
4
High-Z
4
A6
A4
5
Figure 11 Data Write Timing (S-93C46B)
5
A7: S-93C66B
Seiko Instruments Inc.
x : S-93C56B
A5
A3
6
6
High-Z
A4
A2
7
7
A3
A1
8
8
A2
A0
9
9
A1
D15
10
10
A0
11
D15
12
25
D0
t
SV
t
CDS
27
D0
t
PR
t
SV
t
CDS
Verify
busy
t
PR
ready
Verify
Rev.7.0
busy
Standby
High-Z
ready
t
HZ1
_00
Standby
High-Z
t
HZ1

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