2N7002\E9 Vishay Semiconductors, 2N7002\E9 Datasheet - Page 4

• Manufacturer Part Number: 2N7002\E9
• Description: MOSFET SOT-23 N-CH 60V 0.25
• Manufacturer: Vishay Semiconductors

Specifications of 2N7002\E9

• Factory Pack Quantity: 30000

2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
www.vishay.com
11-4
1.0
0.8
0.6
0.4
0.2
0.0
20
16
12
V
7
6
5
4
3
2
1
0
8
4
0
GS
0.0
0
0
= 10, 9, 8, 7 V
I
D
= 0.5 A
400
On-Resistance vs. Drain Current
1
0.2
V
DS
Q
Output Characteristics
g
– Drain-to-Source Voltage (V)
I
800
– Total Gate Charge (pC)
D
2
– Drain Current (A)
Gate Charge
0.4
1200
3
r
DS
r
0.6
DS
@ 5 V = V
1600
@ 10 V = V
V
4
DS
= 30 V
0.8
2000
GS
5
GS
3.5 V
6.5 V
6 V
5.5 V
5 V
4.5 V
4 V
3 V
_
2400
1.0
6
2.5 V
2, 1 V
1.0
0.8
0.6
0.4
0.2
0.0
2.0
1.5
1.0
0.5
0.0
60
50
40
30
20
10
0
–55
0
0
On-Resistance vs. Junction Temperature
V
f = 1 MHz
–30
GS
1
5
= 0 V
V
V
DS
T
Transfer Characteristics
GS
–5
2
J
V
– Junction Temperature (_C)
10
– Drain-to-Source Voltage (V)
GS
– Gate-to-Source Voltage (V)
= 10 V, r
20
Capacitance
3
C
15
T
V
rss
J
GS
= –55_C
45
DS
4
C
= 5 V, r
oss
@ 0.5 A
20
C
S-04279—Rev. F, 16-Jul-01
iss
70
Document Number: 70226
5
DS
25
@ 0.05 A
95
6
125_C
25_C
120
30
7
145
35
8