ZABG4002JA16TC Diodes Inc. / Zetex, ZABG4002JA16TC Datasheet - Page 3

• Manufacturer Part Number: ZABG4002JA16TC
• Description: MOSFET LOW POWER 4 STAGE FET LNA BIAS CTRLR
• Manufacturer: Diodes Inc. / Zetex

Specifications of ZABG4002JA16TC

• Rohs: yes

Maximum Ratings
Electrical Characteristics
Supply Voltage
Supply Current
Power Dissipation
Operating Temperature Range
Storage Temperature Range
Operating Voltage Range
(note 1)
Supply Current
Substrate Voltage
Oscillator Frequency
Gate Characteristics
Gate (G1 to G4)
Drain Characteristics
Drain (D1 to D4)
R
Output Noise
Notes:
ZABG4002
Document number: DS32047 Rev. 2 - 2
CAL
Current Range
Voltage Low
Voltage High
Voltage Disabled
Current Range
Current Operating
Current Disabled
Voltage Operating
delta I
delta I
delta V
delta V
Disable Threshold
Input Current
Drain Voltage
Gate Voltage
(1 and 2)
1. The two Vcc pins are internally connected, only one of the pins needs to be powered for the device to function. See applications section for further
2. ESD sensitive, handling precautions are recommended.
3. The negative bias voltages are generated on-chip using an internal oscillator. Two external capacitors, C
4. The package (QFN1633) exposed pad must either be connected to Csub or left open circuit.
5. The characteristics are measured using two external reference resistors R
6. Noise voltage measurements are made with FETs and gate and drain capacitors of value 10nF in place. Noise voltages are not measured in production.
Parameter
D
D
information.
purpose.
sets the drain current of FETs 1 and 3, resistor R
D
D
Parameter
vs V
vs T
vs V
vs T
OP
CC
OP
CC
I
I
I
I
I
I
I
V
Standard Application Circuit
V
I
V
T
V
T
V
C
C
C
C
D1
D1
CSUB
CSUB
D
D
D
D
OP
OP
D
CC
CC
RCAL
GATE-GND
DRAIN-GND
GATE-GND
DRAIN-GND
RCAL
= 12mA, I
= 8mA, I
= 0, I
= 10mA
= I
= I
= 0, V
= -40°C to +85°C
= -40°C to +85°C
(Measured at T
= 3.3 to 8.0V
= 3.3 to 8.0V
= 0
= -200uA
D2
D2
= 3.0V
= 3.0V
G
= I
= I
Conditions
= -10uA,
RCAL
-40 to +150
= 10nF,
= 10nF,
-0.6 to +10
-40 to +85
= 10nF
= 10nF
D3
D3
G
G
Rating
= 0
= I
= I
= 3.0V
500
= -10uA
80
CAL2
AMB
D4
D4
sets the drain currents of FETs 2 and 4.
= 25°C, V
= 0
= 10mA
www.diodes.com
CC
= 3.3V (note 1), R
3 of 7
CAL1
dV
dV
V
dI
Symbol
dI
V
I
V
V
RCAL(DIS)
V
V
RCAL(DIS)
and R
V
I
D(NOISE)
G(NOISE)
I
I
F
V
D
D
CSUB(L)
V
V
D(DIS)
D
D
D(OP)
CC(L)
G(DIS)
I
CSUB
D(OP)
/dV
/dT
OSC
I
G(H)
I
/dV
CC
G(L)
/dT
CC
G
D
CAL
CAL2
OP
CC
CC
OP
1 = R
of value 39k , wired from pins R
Unit
mW
mA
CAL
°C
°C
V
2 = 39k (setting I
Diodes Incorporated
Min.
-100
-3.0
-3.0
-3.0
150
A Product Line of
3.0
1.8
1.8
0
0
8
NB
and C
D
-2.65
-2.55
Typ.
0.05
0.05
-2.5
-2.5
240
1.2
0.7
2.0
1.2
2.7
1.7
SUB
to 10mA) unless otherwise stated)
42
10
50
of value 47nF are required for this
CAL1/2
0.005
Max.
+500
0.02
to ground. Resistor R
-2.0
-2.0
-2.0
-2.0
600
8.0
4.0
1.0
2.2
3.0
44
15
12
10
10
ZABG4002
© Diodes Incorporated
February 2010
ppm/°C
Vpk-pk
Vpk-pk
%/°C
Unit
%/V
%/V
kHz
mA
mA
mA
mA
uA
uA
uA
V
V
V
V
V
V
V
V
CAL1