ALD1109ESAL Advanced Linear Devices, ALD1109ESAL Datasheet
ALD1109ESAL
Specifications of ALD1109ESAL
Related parts for ALD1109ESAL
ALD1109ESAL Summary of contents
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... Package Package ALD110800ASCL ALD110800APCL ALD110800SCL ALD110800PCL * Contact factory for industrial temp. range or user-specified threshold voltage values. Rev 2.1 ©2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286 ALD110800/ALD110800A/ALD110900/ALD110900A ™ voltage, which reduces or elimi- of these GS(th) 12 Ω) and high DC current denotes lead-free (RoHS)) 0° ...
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... Advanced Linear Devices 10.6V 10.6V 500 mW 0°C to +70°C -65°C to +150°C +260°C Typ Max Unit Test Conditions 0. =1µ 0. µV/°C V DS1 = V DS2 -1.7 mV/° 1µ 0.1V 0 20µ ...
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... MOSFET as well. The Drain current in the linear region ( where: = 0.0V the EPAD GS In this region of operation the I and the device can be used as gate-voltage controlled resistor. For higher values of V tion current I Advanced Linear Devices ) is given by: GS(th GS(th Mobility C = Capacitance / unit area of Gate electrode ...
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... Zero Tempco (ZTC) point, even though that could require special circuit configuration and power consump- tion design consideration. Advanced Linear Devices GS bias voltage. This linear shift in V causes the subthresh ...
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... GS(TH) =+ GS(TH) =+ GS(TH) =+ GS(TH) =+ GS(TH) =+ GS(TH) = -3.5V V GS(TH) = +1.4V V GS(TH) = +0. GS(TH) =+0. Advanced Linear Devices DRAIN-SOURCE ON RESISTANCE vs. DRAIN-SOURCE ON CURRENT 2500 25°C 2000 1500 GS(TH) +4V 1000 500 GS(TH) +6V 0 100 1000 10 DRAIN-SOURCE ON CURRENT (µA) TRANSCONDUCTANCE vs. ...
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... GS(TH =+ =+1V V 1000 10000 + +1V V GS(TH GS(TH GS(TH GS(TH GS(TH GS(TH GS(TH) 75 100 125 Advanced Linear Devices DRAIN SOURCE ON CURRENT, BIAS CURRENT vs. AMBIENT TEMPERATURE 100 Zero Temperature Coefficient (ZTC) 125° 25° GS(TH) GS(TH) GS(TH) GS(TH) +0.0 +0.4 +0 ...
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... DRAIN -SOURCE ON CURRENT(mA) NORMALIZED SUBTHRESHOLD CHARACTERISTICS RELATIVE GATE THRESHOLD VOLTAGE 0.3 0.2 0.1 0 -0.1 -0.2 55°C -0.3 -0.4 10000 10 1000 100 DRAIN-SOURCE CURRENT (nA) ALD110800/ALD110800A/ALD110900/ALD110900A 1000 2.0 5 0.1V D 25°C 1 0.1 Advanced Linear Devices TRANSFER CHARACTERISTICS 1 25° GS(TH) = -3. +10V DS 1.2 V GS(TH) = -1.3V V GS(TH) = -0.4V V GS(TH) = 0.0V 0.8 V GS(TH) = +0.2V 0.4 V GS(TH) = +1.4V V GS(TH) = +0.8V 0 GATE-SOURCE VOLTAGE (V) SUBTHRESHOLD CHARACTERISTICS 2.5 2.0 1 ...
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... Pin Plastic SOIC Package E Dim Min 1. 0.35 b 0.18 C 9.80 D-16 3. 5. ø 0° 0. ø Advanced Linear Devices Millimeters Inches Max Min 1.75 0.053 0.25 0.004 0.45 0.014 0.25 0.007 10.00 0.385 4.05 0.140 1.27 BSC 0.050 BSC 6.30 0.224 0.937 0.024 8° 0° 0.50 0.010 Max 0.069 0.010 0.018 0.010 ...
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... ALD110800/ALD110800A/ALD110900/ALD110900A PDIP-16 PACKAGE DRAWING 16 Pin Plastic DIP Package Dim 18.93 D- S-16 ø Advanced Linear Devices Millimeters Min Max Min 3.81 5.08 0.105 0.38 1.27 0.015 2.03 0.050 1.27 1.65 0.035 0.89 0.38 0.51 0.015 0.20 0.30 0.008 21.33 0.745 7.11 0.220 5.59 7.62 8.26 0.300 2.29 2.79 0.090 7.37 7 ...
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... S (45° (45° ALD110800/ALD110800A/ALD110900/ALD110900A SOIC-8 PACKAGE DRAWING 8 Pin Plastic SOIC Package E Dim D ø ø Advanced Linear Devices Millimeters Min Max Min 1.75 0.053 1.35 0.25 0.004 0.10 0.45 0.014 0.35 0.25 0.007 0.18 5.00 0.185 4.69 4.05 0.140 3.50 1.27 BSC 0.050 BSC 6.30 0.224 5.70 0.937 ...
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... Dim 3. 0. 0.20 c 9.40 D 2.79 S-8 1.02 ø Advanced Linear Devices Millimeters Inches Min Max Min 5.08 0.105 1.27 0.015 2.03 0.050 1.65 0.035 0.51 0.015 0.30 0.008 11.68 0.370 7.11 0.220 8.26 0.300 2.79 0.090 7.87 0.290 3.81 0.110 2.03 0.040 0° 15° 0° Max 0.200 0.050 0.080 ...