VS-ST230S14P0PBF Vishay Semiconductors, VS-ST230S14P0PBF Datasheet - Page 2

• Manufacturer Part Number: VS-ST230S14P0PBF
• Description: SCRs 230 Amp 1400 Volt 360 Amp IT(RMS)
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST230S14P0PBF

• Product Category: SCRs
• Rohs: yes
• Breakover Current Ibo Max: 5970 A
• Rated Repetitive Off-state Voltage Vdrm: 1400 V
• Off-state Leakage Current @ Vdrm Idrm: 30 mA
• Forward Voltage Drop: 1.55 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 150 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-93
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 12

Revision: 05-Mar-12
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Maximum (typical) latching current
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time
Typical turn-off time
BLOCKING
PARAMETER
Maximum critical rate of rise
of off-state voltage
Maximum peak reverse and
off-state leakage current
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: [e-mail], [e-mail],
2
2
t for fusing
t for fusing
www.vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
SYMBOL
SYMBOL
SYMBOL
V
V
I
dV/dt
I
T(RMS)
dI/dt
I
I
I
RRM
V
T(AV)
I
T(TO)1
T(TO)2
DRM
TSM
2
I
r
r
t
t
I
I
2
TM
t1
t2
H
d
q
t
L
t
,
Gate drive 20 V, 20 , t
T
Gate current 1 A, dI
V
I
V
180° conduction, half sine wave
DC at 78 °C case temperature
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x  x I
(I >  x I
(16.7 % x  x I
(I >  x I
I
T
T
T
TM
pk
J
d
R
J
J
J
= T
= 0.67 % V
= T
= T
= 25 °C, anode supply 12 V resistive load
= 50 V, dV/dt = 20 V/μs, gate 0 V 100 , t
= 720 A, T
= 300 A, T
J
J
J
2
maximum linear to 80 % rated V
maximum, anode voltage  80 % V
maximum, rated V
T(AV)
T(AV)
), T
), T
J
DRM
J
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
T(AV)
T(AV)
= T
J
J
= T
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
= T
= T
, T
J
J
< I <  x I
< I <  x I
maximum, t
g
J
J
maximum, dI
J
/dt = 1 A/μs
maximum
maximum
= 25 °C
RRM
RRM
r
www.vishay.com/doc?91000
 1 μs
DRM
T(AV)
T(AV)
Sinusoidal half wave,
initial T
/V
p
VS-ST230SPbF Series
RRM
), T
), T
= 10 ms sine pulse
F
/dt = 20 A/μs,
J
J
applied
Vishay Semiconductors
J
= T
= T
= T
DRM
J
J
J
maximum
maximum
DRM
maximum
[e-mail]
p
= 500 μs
Document Number: 94399
1000 (300)
VALUES
VALUES
VALUES
1000
5700
5970
4800
5000
1630
0.92
0.98
0.88
0.81
1.55
500
230
360
163
148
115
105
600
100
1.0
30
85
UNITS
UNITS
UNITS
kA
kA
A/µs
V/µs
m
mA
mA
°C
µs
A
A
V
V
2
2
s
s