VS-40TPS16PBF Vishay Semiconductors, VS-40TPS16PBF Datasheet - Page 4
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VS-40TPS16PBF
Manufacturer Part Number
VS-40TPS16PBF
Description
SCRs 1600 Volt 35 Amp
Manufacturer
Vishay Semiconductors
Datasheet
1.VS-40TPS16PBF.pdf
(7 pages)
Specifications of VS-40TPS16PBF
Product Category
SCRs
Rohs
yes
Breakover Current Ibo Max
600 A
Rated Repetitive Off-state Voltage Vdrm
1600 V
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Forward Voltage Drop
1.85 V
Gate Trigger Voltage (vgt)
2.5 V
Maximum Gate Peak Inverse Voltage
10 V
Gate Trigger Current (igt)
150 mA
Holding Current (ih Max)
150 mA
Mounting Style
Through Hole
Package / Case
TO-247AC
Factory Pack Quantity
50
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VS-40TPS16PBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Revision: 10-Nov-11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
Fig. 5 - Maximum Non-Repetitive Surge Current
Number Of Equal Amplitude Half Cycle Current Puls es (N)
550
500
450
400
350
300
250
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1
At Any R a ted Load Condition And With
40T PS .. S eries
Rated V
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
RRM
100
0.1
10
0.001
1
Ap plied F ollowing Surge.
Rec tangular gate pulse
b)R ec ommended load line for
a)Rec ommended load line for
<= 30% rated di/ dt: 20 V, 65 ohms
tr = 1 µs, tp >= 6 µs
rated di/ dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
10
VGD
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Initia l T = 125°C
IGD
0.01
J
100
Fig. 7 - On-State Voltage Drop Characteristics
10
1
0.5
100
Instantaneous On-state Voltag e (V)
Fig. 8 - Gate Characteristics
0.1
Instantaneous Gate Current (A)
40T PS ..
(b)
(a)
1
1
4
VS-40TPS16PbF, VS-40TPS16-M3
40T PS .. S eries
T = 125°C
T = 25°C
1.5
J
J
Frequenc y Limited by PG(AV)
10
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
(4) (3)
Fig. 6 - Maximum Non-Repetitive Surge Current
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2
600
550
500
450
400
350
300
250
(2) (1)
0.01
100
40T PS .. S eries
Ma ximum Non Rep etitive S urge Current
Of Conduction May Not Be Maintained.
Vishay Semiconductors
Versus Pulse T rain Duration. Control
Pulse T ra in Duration (s)
1000
DiodesEurope@vishay.com
No Voltage R eap p lied
Rated V
0.1
Document Number: 94389
Initial T = 125°C
RRM
R eap p lied
J
1