VS-ST083S12PFK1P Vishay Semiconductors, VS-ST083S12PFK1P Datasheet - Page 3

• Manufacturer Part Number: VS-ST083S12PFK1P
• Description: SCRs 135 Amp 1200 Volt 135 Amp IT(RMS)
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST083S12PFK1P

• Product Category: SCRs
• Rohs: yes
• Breakover Current Ibo Max: 2560 A
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 30 mA
• Forward Voltage Drop: 2.15 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-94
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 25

Note
• The table above shows the increment of thermal resistance R
Document Number: 94334
Revision: 25-Nov-09
BLOCKING
PARAMETER
Maximum critical rate of rise of off-state voltage
Maximum peak reverse and
off-state leakage current
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate currrent required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
Mounting torque, ± 10 %
Approximate weight
Case style
ΔR
CONDUCTION ANGLE
thJC
CONDUCTION
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
For technical questions, contact:
0.034
0.041
0.052
0.076
0.126
Inverter Grade Thyristors
SYMBOL
SYMBOL
SYMBOL
+ V
P
- V
dV/dt
R
R
I
(Stud Version), 85 A
I
P
V
V
T
RRM
I
DRM
I
G(AV)
I
GM
T
thCS
GT
GD
thJC
GM
GD
Stg
GT
GM
GM
J
,
thJC
T
T
T
T
T
higher value available on request
T
DC operation
Mounting surface, smooth, flat and greased
Non-lubricated threads
Lubricated threads
See dimensions - link at the end of datasheet
J
J
J
J
J
J
RECTANGULAR CONDUCTION
= T
= T
= 25 °C, V
= T
when devices operate at different conduction angles than DC
= T
= T
J
J
J
J
J
maximum, f = 50 Hz, d% = 50
maximum, t
maximum, rated V
maximum, linear to 80 % V
maximum, rated V
[e-mail]
A
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
= 12 V, R
0.025
0.042
0.056
0.079
0.127
p
≤ 5 ms
a
= 6 Ω
Vishay High Power Products
DRM
DRM
/V
/V
RRM
RRM
DRM
applied
applied
ST083SPbF Series
,
TEST CONDITIONS
T
J
= T
J
maximum
- 40 to 125
- 40 to 150
VALUES
VALUES
VALUES
TO-209AC (TO-94)
0.195
(137)
(120)
0.25
0.08
15.5
500
200
130
30
40
20
20
14
5
5
5
3
www.vishay.com
(lbf · in)
UNITS
UNITS
UNITS
UNITS
N · m
V/μs
K/W
K/W
mA
mA
mA
°C
W
A
V
V
V
g
3