BR93L66RF-WE2 Rohm Semiconductor, BR93L66RF-WE2 Datasheet - Page 31

• Manufacturer Part Number: BR93L66RF-WE2
• Description: IC EEPROM 4KBIT 2MHZ 8SOP
• Manufacturer: Rohm Semiconductor

Specifications of BR93L66RF-WE2

• Memory Size: 4K (256 x 16)
• Format - Memory: EEPROMs - Serial
• Memory Type: EEPROM
• Speed: 2MHz
• Interface: Microwire, 3-Wire Serial
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOP
• Clock Frequency: 2MHz
• Supply Voltage Range: 1.8V To 5.5V
• Memory Case Style: SOP
• No. Of Pins: 8
• Operating Temperature Range: -40°C To +85°C
• Svhc: No SVHC (18-Jun-2010)
• Package /: RoHS Compliant
• Memory Configuration: 256 X 16
• Interface Type: Serial, Microwire
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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2) Equivalent circuit
3) I/O peripheral circuit
○Output circuit
○Input circuit
○Pull down resistance Rpd of CS pin
3-1) Pull down CS.
To prevent mistake in operation and mistake write at power ON/OFF, CS pull down resistance is necessary.
Select an appropriate value to this resistance value from microcontroller VOH, IOH, and VIL characteristics of this IC.
CS
SK
DI
Microcontroller
By making CS=“L” at power ON/OFF, mistake in operation and mistake write are prevented.
Refer to the item 6) Notes at power ON/OFF in page 34/35.
“H” output
Fig.41 CS pull down resistance
VOHM
Fig.37 Input circuit (CS)
Fig.39 Input circuit (SK, DI)
RESET int.
IOHM
EN
Fig.36 Output circuit (DO)
Rpd
OEint.
VIHE
“L” input
EEPROM
LPF
LPF
SK(DI)int.
CSint.
EN
DO
31/40
With the value of Rpd to satisfy the above equation, VOHM becomes
2.4V or higher, and VIHE (=2.0V), the equation ② is also satisfied.
Example) When V
TEST1
(TEST)
∴ Rpd ≧ 1.2 [kΩ]
from the equation ①,
・VIHE
・VOHM
・IOHM
Fig.38 Input circuit (TEST1, TEST)
Fig.40 Input circuit (TEST2)
VOHM ≧ VIHE
Rpd ≧
Rpd ≧
CC
TEST2
=5V, VIHE=2V, VOHM=2.4V, IOHM=2mA,
: EEPROM VIH specifications
: Microcontroller VOH specifications
:Microcontroller IOH specifications
VOHM
IOHM
2×10
2.4
-3
・・・②
・・・①
TESTint.
Technical Note
2011.02 - Rev.F