VS-30TPS08PBF Vishay Semiconductors, VS-30TPS08PBF Datasheet - Page 4

• Manufacturer Part Number: VS-30TPS08PBF
• Description: SCRs 800 Volt 30 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-30TPS08PBF

• Product Category: SCRs
• Rohs: yes
• Breakover Current Ibo Max: 300 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.3 V
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 45 mA
• Holding Current (ih Max): 100 mA
• Mounting Style: Through Hole
• Package / Case: TO-247AC

Revision: 10-Nov-11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: [e-mail], [e-mail],
Numb er Of Equa l Amplitude Ha lf Cyc le Current Pulses (N)
280
260
240
220
200
180
160
140
120
Fig. 5 - Maximum Non-Repetitive Surge Current
1
At Any Rated Load Condition And With
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Rated V
30T PS .. S eries
0.01
0.1
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.0001
1
RRM
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Applied Following S urge.
10
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Initial T = 125°C
1000
100
VS-30TPS..PbF Series, VS-30TPS..-M3 Series
10
Fig. 8 - Thermal Impedance Z
1
0.001
Fig. 7 - On-State Voltage Drop Characteristics
J
0
S ingle Pulse
Instantaneous On-state Voltage (V)
1
S quare Wave Pulse Duration (s )
100
T = 25°C
2
J
3
0.01
4
30T PS .. S eries
4
thJC
T = 125°C
J
5
Characteristics
6
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300
280
260
240
220
200
180
160
140
120
30T PS .. S eries
Fig. 6 - Maximum Non-Repetitive Surge Current
0.01
0.1
7
S teady S tate Value
(DC Operation)
30T PS .. S eries
Maximum Non Repetitive S urge Current
Of Conduc tion May Not Be Ma intained.
Versus Pulse T ra in Duration. Control
Vishay Semiconductors
Pulse T rain Duration (s)
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No Voltage R eapplied
R ated V
0.1
1
Document Number: 94386
Initial T = 125°C
RRM
R eapplied
J
1