VS-ST110S04P0VPBF Vishay Semiconductors, VS-ST110S04P0VPBF Datasheet

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VS-ST110S04P0VPBF

Manufacturer Part Number
VS-ST110S04P0VPBF
Description
SCRs 110 Amp 400 Volt 175 Amp IT(RMS)
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-ST110S04P0VPBF

Product Category
SCRs
Rohs
yes
Breakover Current Ibo Max
2830 A
Rated Repetitive Off-state Voltage Vdrm
400 V
Off-state Leakage Current @ Vdrm Idrm
20 mA
Forward Voltage Drop
1.52 V
Gate Trigger Voltage (vgt)
3 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
150 mA
Holding Current (ih Max)
600 mA
Mounting Style
Stud
Package / Case
TO-94
Factory Pack Quantity
25
ELECTRICAL SPECIFICATIONS
Document Number: 94393
Revision: 17-Aug-10
PRODUCT SUMMARY
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
I
I
I
V
t
T
VOLTAGE RATINGS
TYPE NUMBER
ST110S
T(AV)
T(RMS)
TSM
2
q
J
DRM
t
/V
RRM
I
T(AV)
Phase Control Thyristors (Stud Version), 110 A
TO-209AC (TO-94)
VOLTAGE
CODE
04
08
12
16
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
T
50 Hz
60 Hz
50 Hz
60 Hz
Typical
C
AND OFF-STATE VOLTAGE
TEST CONDITIONS
V
DRM
REPETITIVE PEAK
110 A
/V
RRM
1200
1600
400
800
V
, MAXIMUM
FEATURES
• Center gate
• International standard case TO-209AC (TO-94)
• Compression bonded encapsulation for heavy
• Hermetic glass-metal case with ceramic insulator
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
duty operations such as severe thermal cycling
(Glass-metal seal over 1200 V)
400 to 1600
- 40 to 125
VALUES
DiodesEurope@vishay.com
2700
2830
36.4
33.2
110
175
100
90
NON-REPETITIVE
V
PEAK VOLTAGE
RSM
, MAXIMUM
1300
1700
500
900
V
Vishay Semiconductors
ST110SPbF Series
AT T
I
DRM
UNITS
kA
J
/I
°C
μs
°C
A
A
V
RRM
= T
2
www.vishay.com
s
mA
J
20
MAXIMUM
MAXIMUM
1

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VS-ST110S04P0VPBF Summary of contents

Page 1

... Controlled DC power supplies • AC controllers TEST CONDITIONS 400 to 1600 - 40 to 125 MAXIMUM DRM RRM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 400 800 1200 1600 ST110SPbF Series Vishay Semiconductors VALUES UNITS 110 A 90 °C 175 2700 A 2830 36 33.2 V 100 μs ° ...

Page 2

... ST110SPbF Series Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current Maximum peak, one-cycle non-repetitive surge current 2 Maximum I t for fusing t for fusing 2 Maximum I Low level value of threshold voltage High level value of threshold voltage ...

Page 3

... SYMBOL TEST CONDITIONS Stg R DC operation thJC R Mounting surface, smooth, flat and greased thCS Non-lubricated threads Lubricated threads See dimensions - link at the end of datasheet DiodesEurope@vishay.com ST110SPbF Series Vishay Semiconductors VALUES UNITS TYP. MAX 2 5.0 180 - 90 150 mA ...

Page 4

... ST110SPbF Series Vishay Semiconductors R CONDUCTION thJC CONDUCTION ANGLE SINUSOIDAL CONDUCTION 180° 120° 90° 60° 30° Note • The table above shows the increment of thermal resistance R 130 ST110S Series R (DC) = 0.195 K/W thJC 120 110 Conduction Angle 100 90 30° ...

Page 5

... Tj = 25˚C 100 Tj = 125˚C ST110S Series 10 0.5 1.5 2.5 3.5 Instantaneous On-state Voltage (V) Fig On-State Voltage Drop Characteristics ST110SPbF Series Vishay Semiconductors 75 100 125 2800 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 2600 Of Conduction May Not Be Maintained. 2400 Initial T = 125°C J ...

Page 6

... ST110SPbF Series Vishay Semiconductors 1 Steady State Value R = 0.195 K/W thJC (DC Operation) 0.1 0.01 0.001 0.001 100 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/dt : 10V, 10ohms 10 tr<=1 µs 1 0.1 0.001 www.vishay.com For technical questions within your region, please contact one of the following: 6 DiodesAmericas@vishay ...

Page 7

... (see Voltage Ratings table) RRM V = Glass-metal seal (only up to 1200 V) None = Ceramic housing (over 1200 V) None = 500 V/µs (standard value 1000 V/µs (special selection) LINKS TO RELATED DOCUMENTS ST110SPbF Series Vishay Semiconductors V L PbF www.vishay.com/doc?95078 www.vishay.com DiodesEurope@vishay.com 7 ...

Page 8

... Document Number: 95078 Revision: 23-Sep-08 16.5 (0.65) MAX. Ø 4.3 (0.17) 2 C.S. 0.4 mm (0.0006 s.i.) 215 ± 10 White gate (8.46 ± 0.39) White shrink Ø 23.5 (0.93) MAX 1/2"-20UNF-2A 29.5 (1.16) MAX. For technical questions, contact: indmodules@vishay.com Outline Dimensions Vishay Semiconductors 2.6 (0.10) MAX. Flexible lead 20 (0.79) MIN (0.025 s.i.) Fast-on terminals AMP. 280000-1 REF-250 www.vishay.com 1 ...

Page 9

... Outline Dimensions Vishay Semiconductors in millimeters (inches) Ceramic housing Ø 8.5 (0.33) Red silicon rubber Red cathode 157 (6.18) 170 (6.69) Red shrink 70 (2.75) MIN. 29 (1.14) MAX. 12.5 (0.49) MAX. 21 (0.83) MAX. www.vishay.com 2 TO-209AC (TO-94) for ST110S Series 16.5 (0.65) MAX. Ø 4.3 (0.17) 2 C.S. 0.4 mm (0.0006 s.i.) 215 ± 10 White gate (8.46 ± 0.39) White shrink Ø 22.5 (0.88) MAX 1/2" ...

Page 10

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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