VS-ST083S10PFK0P Vishay Semiconductors, VS-ST083S10PFK0P Datasheet - Page 7

• Manufacturer Part Number: VS-ST083S10PFK0P
• Description: SCRs 135 Amp 1000 Volt 135 Amp IT(RMS)
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST083S10PFK0P

• Product Category: SCRs
• Rohs: yes
• Breakover Current Ibo Max: 2560 A
• Rated Repetitive Off-state Voltage Vdrm: 1000 V
• Off-state Leakage Current @ Vdrm Idrm: 30 mA
• Forward Voltage Drop: 2.15 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-94
• Factory Pack Quantity: 25

Document Number: 94334
Revision: 25-Nov-09
10 000
1000
100
10
10
100
t
0.1
10
p
1
0.001
ST083S Series
Sinusoidal pulse
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
Pulse Basewidth (µs)
rated dI/dt: 20 V, 10 Ω; t
≤ 30 % rated dI/dt: 10 V, 10 Ω
t
r
100
0.1
≤ 1 µs
0.2
0.3
0.5
1
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
2
For technical questions, contact:
1000
3
0.01
V
20 joules per pulse
GD
5
I
GD
r
≤ 1 µs
10
Inverter Grade Thyristors
(Stud Version), 85 A
Device: ST083S Series
Fig. 15 - Gate Characteristics
10 000
Instantaneous Gate Current (A)
0.1
(b)
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(a)
10 000
1
1000
Frequency limited by P
100
10
10
Vishay High Power Products
t
p
(1) P
(2) P
(3) P
(4) P
ST083S Series
Rectangular pulse
dI/dt = 50 A/µs
0.1
Pulse Basewidth (µs)
ST083SPbF Series
GM
GM
GM
GM
100
10
(1)
G(AV)
= 10 W, t
= 20 W, t
= 40 W, t
= 60 W, t
0.2
0.3
(2)
0.5
p
p
p
p
1
= 20 ms
= 10 ms
= 5 ms
= 3.3 ms
2
1000
(3)
4
(4)
7.5
20 joules
100
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per pulse
10 000
7