VS-ST083S10PFK2P Vishay Semiconductors, VS-ST083S10PFK2P Datasheet - Page 7
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VS-ST083S10PFK2P
Manufacturer Part Number
VS-ST083S10PFK2P
Description
SCRs 135 Amp 1000 Volt 135 Amp IT(RMS)
Manufacturer
Vishay Semiconductors
Datasheet
1.VS-ST083S08PFN1P.pdf
(10 pages)
Specifications of VS-ST083S10PFK2P
Product Category
SCRs
Rohs
yes
Breakover Current Ibo Max
2560 A
Rated Repetitive Off-state Voltage Vdrm
1000 V
Off-state Leakage Current @ Vdrm Idrm
30 mA
Forward Voltage Drop
2.15 V
Gate Trigger Voltage (vgt)
3 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
200 mA
Holding Current (ih Max)
600 mA
Mounting Style
Stud
Package / Case
TO-94
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Factory Pack Quantity
25
Document Number: 94334
Revision: 25-Nov-09
10 000
1000
100
10
10
100
t
0.1
10
p
1
0.001
ST083S Series
Sinusoidal pulse
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
Pulse Basewidth (µs)
rated dI/dt: 20 V, 10 Ω; t
≤ 30 % rated dI/dt: 10 V, 10 Ω
t
r
100
0.1
≤ 1 µs
0.2
0.3
0.5
1
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
2
For technical questions, contact:
1000
3
0.01
V
20 joules per pulse
GD
5
I
GD
r
≤ 1 µs
10
Inverter Grade Thyristors
(Stud Version), 85 A
Device: ST083S Series
Fig. 15 - Gate Characteristics
10 000
Instantaneous Gate Current (A)
0.1
(b)
indmodules@vishay.com
(a)
10 000
1
1000
Frequency limited by P
100
10
10
Vishay High Power Products
t
p
(1) P
(2) P
(3) P
(4) P
ST083S Series
Rectangular pulse
dI/dt = 50 A/µs
0.1
Pulse Basewidth (µs)
ST083SPbF Series
GM
GM
GM
GM
100
10
(1)
G(AV)
= 10 W, t
= 20 W, t
= 40 W, t
= 60 W, t
0.2
0.3
(2)
0.5
p
p
p
p
1
= 20 ms
= 10 ms
= 5 ms
= 3.3 ms
2
1000
(3)
4
(4)
7.5
20 joules
100
www.vishay.com
per pulse
10 000
7