VS-ST230S04P0V Vishay Semiconductors, VS-ST230S04P0V Datasheet - Page 3

• Manufacturer Part Number: VS-ST230S04P0V
• Description: SCRs 400 Volt 230 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST230S04P0V

• Product Category: SCRs
• Rohs: yes
• Breakover Current Ibo Max: 5970 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 30 mA
• Forward Voltage Drop: 1.55 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 150 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-93
• Factory Pack Quantity: 12

Note
• The table above shows the increment of thermal resistance R
Revision: 05-Mar-12
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Mounting torque, ± 10 %
Approximate weight
Case style
R
CONDUCTION ANGLE
thJC
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: [e-mail], [e-mail],
180°
120°
CONDUCTION
90°
60°
30°
www.vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
SINUSOIDAL CONDUCTION
0.016
0.019
0.025
0.036
0.060
SYMBOL
SYMBOL
R
+ V
P
- V
R
P
T
V
V
thC-hs
I
G(AV)
I
I
GM
T
GD
thJC
GT
GM
GD
Stg
GT
GM
J
GM
T
T
T
T
T
T
T
T
T
T
T
DC operation
Mounting surface, smooth, flat and greased
Non-lubricated threads
Lubricated threads
See dimensions - link at the end of datasheet
J
J
J
J
J
J
J
J
J
J
J
= T
= T
= T
= T
= - 40 °C
= 25 °C
= 125 °C
= - 40 °C
= 25 °C
= 125 °C
= T
thJC
RECTANGULAR CONDUCTION
J
J
J
J
J
maximum
when devices operate at different conduction angles than DC
maximum, t
maximum, f = 50 Hz, d% = 50
maximum, t
maximum, t
3
TEST CONDITIONS
TEST CONDITIONS
0.012
0.020
0.027
0.037
0.060
p
p
p
 5 ms
 5 ms
 5 ms
Maximum required gate
trigger/current/voltage are
the lowest value which will
trigger all units 12 V anode
to cathode applied
Maximum gate current/
voltage not to trigger is the
maximum value which will
not trigger any unit with rated
V
DRM
www.vishay.com/doc?91000
anode to cathode applied
VS-ST230SPbF Series
Vishay Semiconductors
TEST CONDITIONS
[e-mail]
T
J
= T
J
Document Number: 94399
maximum
TYP.
180
2.9
1.8
1.2
90
40
- 40 to 125
- 40 to 150
TO-209AB (TO-93)
VALUES
VALUES
(275)
(210)
10.0
0.25
0.10
0.04
24.5
280
2.0
3.0
5.0
20
10
31
MAX.
150
3.0
-
-
-
-
(lbf in)
UNITS
UNITS
UNITS
N · m
K/W
K/W
mA
mA
°C
W
A
V
V
V
g