VS-ST103S08PFL1P Vishay Semiconductors, VS-ST103S08PFL1P Datasheet - Page 2

• Manufacturer Part Number: VS-ST103S08PFL1P
• Description: SCRs 105 Amp 800 Volt 165 Amp IT(RMS)
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST103S08PFL1P

• Product Category: SCRs
• Rohs: yes
• Breakover Current Ibo Max: 3150 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 30 mA
• Forward Voltage Drop: 1.73 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-94
• Factory Pack Quantity: 25

ST103SP Series
Vishay High Power Products
www.vishay.com
2
CURRENT CARRYING CAPABILITY
FREQUENCY
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage V
Voltage before turn-on V
Rise of on-state current dI/dt
Case temperature
Equivalent values for RC circuit
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one half cycle,
non-repetitive surge current
Maximum I
Maximum I
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum holding current
Typical latching current
2
2
t for fusing
√t for fusing
r
d
For technical questions, contact: [e-mail]
280
310
320
340
60
SYMBOL
180° el
V
V
I
T(RMS)
I
I
V
T(TO)1
T(TO)2
T(AV)
I
TSM
22/0.15
I
2
r
r
I
I
2
TM
Inverter Grade Thyristors
t1
t2
H
V
√t
L
t
50
DRM
50
(Stud Version), 105 A
180
200
200
210
85
I
TM
180° conduction, half sine wave
DC at 76 °C case temperature
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
I
t
(16.7 % x π x I
T
(I > π x I
(16.7 % x π x I
T
(I > π x I
T
T
TM
p
J
J
J
J
= 10 ms sine wave pulse
= T
= T
= 25 °C, I
= 25 °C, V
= 300 A, T
J
J
maximum
maximum
T(AV)
T(AV)
T
), T
), T
440
470
480
490
A
60
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
> 30 A
J
T(AV)
T(AV)
= 12 V, R
= T
J
J
180° el
TEST CONDITIONS
= T
= T
22/0.15
J
V
< I < π x I
< I < π x I
maximum,
50
DRM
J
J
-
maximum
maximum
RRM
RRM
a
= 6 Ω, I
330
300
310
320
I
85
TM
T(AV)
T(AV)
Sinusoidal half wave,
initial T
),
),
G
= 1 A
J
= T
4730
2500
1530
840
J
60
maximum
100 µs
22/0.15
V
50
DRM
-
Document Number: 94365
3630
1850
1090
580
I
85
TM
VALUES
Revision: 29-Apr-08
3000
3150
2530
2650
1000
1.73
1.32
1.35
1.40
1.30
105
165
450
600
85
45
41
32
29
UNITS
Ω/µF
A/µs
°C
UNITS
A
V
kA
kA
mΩ
mA
°C
A
A
V
2
2
√s
s